InAs quantum dots over InGaAs for infrared photodetectors

Pires, M. P.; Landi, S. M.; Tribuzy, C.V.-B.; Nunes, Luiz Antônio de Oliveira; Marega, E.; Souza, P. L.

doi:10.1016/j.jcrysgro.2004.08.105

Cited by 10 publications

(7 citation statements)

References 13 publications

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“…This is demonstrated in our experiments. The continuous wavelength tuning of the InAs QDs with the GaAs interlayer thickness is most convenient to compensate for additional wavelength redshifts in stacked QD layers 17 for applications in photonic devices operating in the 1.55-m wavelength region. Experiments with GaP interlayers, shifting the QD peak emission wavelength to 1.55 m in CBE for submonolayer coverages, 18 were not successful.…”

Section: Wavelength Tuning By Gaas Interlayer Thicknessmentioning

confidence: 99%

Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy

Anantathanasarn

Nötzel

Veldhoven

et al. 2005

Journal of Applied Physics

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Section: Wavelength Tuning By Gaas Interlayer Thicknessmentioning

confidence: 99%

Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy

Anantathanasarn

Nötzel

Veldhoven

et al. 2005

Journal of Applied Physics

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“…For the general InGaAs/ GaAs QDIP system, with or without wells, spectral responses within the medium-and long-wavelength infrared bands have been reported. 4,5 However, for the very few reports of MOCVD growth 6,7 there are no known reports of DWELL structures that are similar to the detectors reported here.…”

mentioning

confidence: 57%

Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

Jolley

Tan

et al. 2007

Applied Physics Letters

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We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. In 0.5 Ga 0.5 As quantum dots embedded in an In 0.15 Ga 0.85 As/ GaAs quantum well ͑QW͒ or a GaAs/ Al 0.2 Ga 0.8 As QW have been incorporated into photodetectors and were characterized. A spectral response in the 3-5 m atmospheric window has been achieved by adopting the GaAs/ Al 0.2 Ga 0.8 As QW.

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“…Advantage with near infrared (NIR) is that it can penetrate many materials which otherwise absorb UV-visible spectrum. Thus it has become important due to its wide range of applications in biology, telecommunication, security, remote sensing, military, and space applications [1][2][3][4]. Self assembled InGaAs/GaAs Quantum Dots (QDs) can emit within the 1.0-1.2 µm range at room temperature and most of the realisations of infrared photdetectors use this III-V system which have the advantages of mature epitaxial technologies.…”

Section: Introductionmentioning

confidence: 99%

Self‐assembled InGaAs/GaAs quantum dot photodetector on germanium substrate

Banerjee

Halder

Chakrabarti

2011

Phys. Status Solidi C

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We are reporting the growth of 30 layer self‐assembled InGaAs/GaAs quantum dot infrared photodetector (QDIP) structures on Ge substrate where a proper interface formation procedure was followed to minimise the defect density at the GaAs/Ge interface. The interface formation technique includes deposition of a migration enhanced epitaxy (MEE) grown GaAs layer followed by deposition of a thin GaAs layer grown with multiple annealing steps in between. The structural and optical properties of the heterostructure are evaluated by Transmission Electron Microscopy (TEM) and Photoluminescence (PL). The I‐V curve for the grown device structure has been demonstrated. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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InAs quantum dots over InGaAs for infrared photodetectors

Cited by 10 publications

References 13 publications

Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy

Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy

Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

Self‐assembled InGaAs/GaAs quantum dot photodetector on germanium substrate

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