Indium incorporation in quaternary In x Al y Ga1−x−y N for UVB-LEDs

Enslin, Johannes; Wernicke, Tim; Lobanova, A.V.; Kusch, Gunnar; Spasevski, Lucia; Teke, Tolga; Belde, Bettina; Martin, Robert; Талалаев, Р.А.; Kneissl, Michael

doi:10.7567/1347-4065/ab07a4

Cited by 5 publications

(2 citation statements)

References 34 publications

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“…Also, the Al/In ratio in InAlGaN is found to be 4.88 for the latticematched InAlGaN/GaN heterojunction [24]. Considering the actual epitaxial growth of InAlGaN material [25,26], quaternary InAlGaN alloys nearly lattice-matched to GaN with y = 0.05, y = 0.06, y = 0.09 are selected as barriers in order to investigate the deep-level working mechanism of near latticematched InAlGaN/GaN RTDs. Table 1 lists the basic material parameters needed in numerical simulation.…”

Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier

Yang

Zhang

et al. 2020

Semicond. Sci. Technol.

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AlInGaN lattice-matched to GaN is proposed as a barrier for double-barrier single quantum well structure resonant tunneling diodes (RTDs), and it achievesnearly strain-free RTD with low In composition and thereby relatively high manufacturability. Compared with the lattice-matched ternary Al0.83In0.17N/GaN RTD, three lattice-matched InAlGaN/GaN RTD samples exhibit peak current density J P over 20 times larger than that of the lattice-matched ternary RTD in numerical simulations. Simultaneously, two shallow defect levels (E 1 = 0.351 eV, E 2 = 0.487 eV) are considered at the RTD heterointerface to reveal the I–V characteristics under different defect densities. Negative differential resistance characteristics of the three quaternary RTDs are still available even though the defect density is up to ∼1018 cm−3, while that of the lattice-matched ternary RTD almost disappears when the defect density is ∼1017 cm−3 as a result of the lager ionization rate. Further, we introduce a deep-level defect E t = 1 eV at the heterointerface and perform multiple forward voltage sweeps. Simulations show that the quaternary RTD samples have better reproducibility in spite of the defect density being 100 times larger than that of the lattice-matched ternary RTD. This work illustrates that InAlGaN can provide greater flexibility for the design and fabrication of GaN-based RTDs.

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Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier

Yang

Zhang

et al. 2020

Semicond. Sci. Technol.

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“…Sample A3 was grown on an AlN ELO structure with dislocation density of less than 2 × 10 9 cm −2 . For all samples of series A, the next layers are Al 0.35 Ga 0.65 N:Si with ≈ 6 µm (1.5 µm in case of A3), 3 QWs having nominal well and barrier compositions of In 0.02 Al 0.22 Ga 0.76 N/Al 0.30 Ga 0.70 N. 13 Samples A1 and A3 have 2 nm (sample A2 4 nm) thick QWs. The topmost layer consists Sample B is very similar to sample A1.…”

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confidence: 99%

Origin of defect luminescence in ultraviolet emitting AlGaN diode structures

Feneberg

Romero

Goldhahn

et al. 2021

Applied Physics Letters

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Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230 nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells.

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Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs

Höpfner

Gupta

Guttmann

et al. 2023

Applied Physics Letters

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The electroluminescence of UVB light-emitting diodes emitting at 310 nm before and after 1000 h of operation is studied in the temperature range from 20 to 340 K. Before operation, the external quantum efficiency (EQE) at 10 mA gradually increases with decreasing temperature from 0.8% at 340 K to 1.8% at 150 K and then levels off. This trend is attributed to a reduction of non-radiative recombination and finally the domination of radiative recombination at low temperatures. After 1000 h of operation, the EQE has dropped to 0.45% at 340 K with a maximum EQE of 1.4% at 80 K, followed by a drop for temperatures below 80 K. These findings suggest a stress-induced reduction of both the radiative recombination efficiency and the carrier injection efficiency.

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Indium incorporation in quaternary In _x Al _y Ga_1−x−yN for UVB-LEDs

Cited by 5 publications

References 34 publications

Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier

Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier

Origin of defect luminescence in ultraviolet emitting AlGaN diode structures

Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs

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