Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

Abstract

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer *Wu Yu-Xin(吴玉新) a) , Zhu Jian-Jun(朱建军) a) † , Chen Gui-Feng(陈贵锋) b) , Zhang Shu-Ming(张书明) a) , Jiang De-Sheng(江德生) a) , Liu Zong-Shun(刘宗顺) a) , Zhao De-Gang(赵德刚) a) , Wang Hui(王 辉) a) , Wang Yu-Tian(王玉田) a) , and Yang Hui(杨 辉) a)c)