Influence of defects and band offsets on carrier transport mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells

Song, Young Joo; Park, M. R.; Guliants, Elena A.; Anderson, Wayne A.

doi:10.1016/s0927-0248(00)00222-1

Cited by 63 publications

(30 citation statements)

References 14 publications

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“…Such characterization was pursued by several other groups too [27,54,[162][163][164][165]. Typically, dark I -V measurements reveal two distinct operation regimes for SHJ devices [165,166].…”

Section: Basic Considerationsmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf

Descoeudres

Holman

et al. 2012

Green

763

352

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Abstract. Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at the industrial production level. The key feature of this technology is that the metal contacts, which are highly recombination active in traditional, diffused-junction cells, are electronically separated from the absorber by insertion of a wider bandgap layer. This enables the record open-circuit voltages typically associated with heterojunction devices without the need for expensive patterning techniques. This article reviews the salient points of this technology. First, we briefly elucidate device characteristics. This is followed by a discussion of each processing step, device operation, and device stability and industrial upscaling, including the fabrication of solar cells with energyconversion efficiencies over 21%. Finally, future trends are pointed out.

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Section: Basic Considerationsmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf

Descoeudres

Holman

et al. 2012

Green

763

352

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“…After annealed, differently with the conventional wisdom, the current density drops to a lower level than the as-grown sample, which suggests a barrier height limited conduction mechanism, such as a diffusion or emission process since the annealing increases the ∆E C . 39 The larger conduction band offset is sufficient to provide a significant electron confinement potential for the heterojunction and restrains the electron export. 40 In conclusion, the band alignment of PLD-TiO 2 /FTO heterojunction and the effect of annealing were studied by high resolution XPS measurement.…”

Section: Aip Advances 6 015314 (2016)mentioning

confidence: 99%

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

et al. 2016

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The energy band alignment between pulsed-laser-deposited TiO2 and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO) of 0.61 eV and a conduction band offset (CBO) of 0.29 eV were obtained across the TiO2/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltage test has verified that the band alignment has a significant effect on the current transport of the heterojunction.

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“…Rapid thermal annealing ͑RTA͒ is applied for 30 s in an N 2 atmosphere at 1100°C. 16,17 Low-temperature photoluminescence measurements under 405 nm laser excitation 15 lead to the spectra in Fig. In the bright-field TEM image ͑see Fig.…”

Section: Sample Fabrication and Pl Measurementsmentioning

confidence: 99%

Electronic band gap of Si/SiO2 quantum wells: Comparison of ab initio calculations and photoluminescence measurements

Wagner

Seino

Bechstedt

et al. 2007

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inPhotoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Dependence of band gap energy shift of In 0.2 Ga 0.8 As/GaAs multiple quantum well structures by impurity-free vacancy disordering on stoichiometry of SiO x and SiN x capping layersWe investigate the influence of layer thicknesses and interface modifications on the fundamental electronic gap of Si/ SiO 2 multilayers by a combined ab initio calculation and photoluminescence ͑PL͒ analysis. For the band gap calculations different Si/ SiO 2 interface models are studied. Experimentally investigated multiple quantum wells are prepared by remote plasma-enhanced chemical vapor deposition and rapid thermal annealing. The well-width dependence of the band gap obtained from PL measurements is much weaker than found in previous studies. This sublinear variation is in accordance with simulated electronic band gaps for hydrogen-free Si/ SiO 2 interfaces. The presence of hydrogen at the interfaces enforces the confinement effect for the band gap. Materials involved: nanocrystalline silicon, amorphous silica, ␤-cristobalite silica, and Si/ SiO 2 interface.

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Influence of defects and band offsets on carrier transport mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells

Cited by 63 publications

References 14 publications

High-efficiency Silicon Heterojunction Solar Cells: A Review

High-efficiency Silicon Heterojunction Solar Cells: A Review

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

Electronic band gap of Si/SiO2 quantum wells: Comparison of ab initio calculations and photoluminescence measurements

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