Influence of dopant concentration on the optical properties of ZnO: In films by sol–gel method

Çağlar, Müjdat; Ilıcan, Saliha; Çağlar, Yasemin

doi:10.1016/j.tsf.2009.03.037

Cited by 195 publications

(75 citation statements)

References 16 publications

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“…Nevertheless, these values are similar to those calculated using the transmission spectra and comparable with the literature [33]. The refractive index of the films can be determinate by from the following relation [36]:…”

Section: -P5supporting

confidence: 88%

CoO doping effects on the ZnO films through EBPDV technique

Bernardi

Maia

Antonelli

et al. 2014

Eur. Phys. J. Appl. Phys.

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Abstract. Nanometric Zn1−xCoxO (x = 0.020, 0.025 and 0.030 in mol.%) nanopowders were obtained from low temperature calcination of a resin prepared using the Pechini's method. Firing the Zn1−xCoxO resin at 400 • C/2 h a powder with hexagonal structure was obtained as measured by X-ray diffraction (XRD). The powder presented average particle size of 40 nm observed by field emission scanning electronic microscopy (FE-SEM) micrographs and average crystallite size of 10 nm calculated from the XRD using Scherrer's equation. Nanocrystalline Zn 1−xCoxO films with good homogeneity and optical quality were obtained with 280-980 nm thicknesses by electron beam physical vapour deposition (EBPVD) under vacuum onto silica substrate at 25 • C. Scanning electron microscopy with field emission gun showed that the film microstructure is composed by spherical grains and some needles. In these conditions of deposition the films presented only hexagonal phase observed by XRD. The UV-visible-NIR and diffuse reflectance properties of the films were measured and the electric properties were calculated using the reflectance and transmittance spectra.

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Section: -P5supporting

confidence: 88%

CoO doping effects on the ZnO films through EBPDV technique

Bernardi

Maia

Antonelli

et al. 2014

Eur. Phys. J. Appl. Phys.

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“…DFT computations of ZnO revealed its electronic structure with direct band gap along Γ point transition and the value of optical band gap of ∼3.4 eV. The experimentally obtained optical band gap of ZnO showed good agreement with the theoretically reported value [10][11][12]. Also, DFT computations of ZnO revealed a large number of transition levels due to intrinsic defects.…”

Section: Introductionsupporting

confidence: 77%

Influence of zinc concentration on band gap and sub-band gap absorption on ZnO nanocrystalline thin films sol-gel grown

Munirah

Khan

Aziz

et al. 2017

Materials Science-Poland

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ZnO thin films were fabricated on quartz substrates at different zinc acetate molar concentrations using sol-gel spin coating method. The samples were characterized using X-ray diffraction, field emission scanning electron microscope, UV-Vis spectroscopy, FT-IR spectroscopy and photoluminescence spectroscopy. Sub-band gap absorption of ZnO thin films in the forbidden energy region was carried out using highly sensitive photothermal deflection spectroscopy (PDS). The absorption coefficients of ZnO thin films increased in the range of 1.5 eV to 3.0 eV, upon increasing zinc concentration. The optical band gaps were evaluated using Tauc's plots and found to be in the range of 3.31 eV to 3.18 eV. They showed the red shift in the band edge on increase in zinc concentration. The PL spectra of ZnO thin films revealed the characteristic band edge emission centered at the 396 nm along with green emission centered at the 521 nm.

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“…The absorption of the UV spectrum is related to the bandgap of ZnO. Bandgaps can be estimated using the Urbach model 22 by fitting the absorption coefficient, α, to an equation. By applying this theory, the estimated bandgap energy of ZnO nanorods grown by using a dipping method in a ZnO nanoparticle solution on p-type PS is 3.30 eV.…”

Section: Methodsmentioning

confidence: 99%

Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si

Park¹,

Park²,

Ahn³

et al. 2013

Bulletin of the Korean Chemical Society

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N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 V/µm were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

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Influence of dopant concentration on the optical properties of ZnO: In films by sol–gel method

Cited by 195 publications

References 16 publications

CoO doping effects on the ZnO films through EBPDV technique

CoO doping effects on the ZnO films through EBPDV technique

Influence of zinc concentration on band gap and sub-band gap absorption on ZnO nanocrystalline thin films sol-gel grown

Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si

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