Influence of gate dielectrics on electrical properties of F8T2 polyfluorene thin film transistors

Swensen, James S.; Kanicki, Jerzy; Heeger, Alan J.

doi:10.1117/12.507630

Cited by 16 publications

(7 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…F8T2 has been investigated by Swensen et al with various inorganic dielectrics to increase capacitance. The authors quoted mobility between 1 × 10 -5 and 5 × 10 -5 cm 2 V -1 s -1 for F8T2 devices without a “mobility-enhancing” monolayer at the semiconductor dielectric interface using the dielectrics TiO 2 and Al 2 O 3 , two different types of silicon nitride, and SiO 2 .…”

Section: Effects Related To the Gate Capacitance And Charge Densitymentioning

confidence: 99%

Gate Insulators in Organic Field-Effect Transistors

et al. 2004

View full text Add to dashboard Cite

In this paper, we review recent progress in the understanding of insulator/semiconductor interfaces in organic field-effect transistors (OFETs). We would like to emphasize that the choice of gate insulator is as important for high-quality OFET devices as the semiconductor itself, especially because of the unique transport mechanisms operating in them. To date researchers have explored numerous organic and inorganic insulator materials, some of them designed to improve the morphology of the organic semiconductor (OSC). Surface treatments, particularly on inorganic insulators, have been shown to influence significantly molecular ordering and device performance. In addition, the deposition technique used for the insulator and semiconductor layers has a further impact on the active interface. Dielectric related effects are reviewed here for a variety of polymeric and molecular semiconductors reported in the literature, with an emphasis on electronic transport. We also review in more detail experiences at Philips and the recent work at Avecia to clarify some of the interface phenomena using amorphous OSC.

show abstract

Section: Effects Related To the Gate Capacitance And Charge Densitymentioning

confidence: 99%

Gate Insulators in Organic Field-Effect Transistors

et al. 2004

View full text Add to dashboard Cite

show abstract

“…The origin of the bias‐induced hysteresis in OFETs could be attributed to the use of ferroelectric materials as the gate dielectrics 9, 13. On the other hand, for OFETs made of non‐ferroelectric gate dielectrics, the origin of the bias‐induced hysteresis is correlated with the trapping of charge carriers in the gate dielectrics,14, 18 the interface at the active layer/dielectrics junction,19, 20 or the active layer21, 22 of devices. The trapped charges electrostatically shield the effective electrical bias applied to the gate with source/drain electrodes, in which the modulations of I D are associated with the trapping and de‐trapping processes of charge carriers23, 25 under the various bias regimes.…”

Section: Introductionmentioning

confidence: 99%

Manipulating the Hysteresis in Poly(vinyl alcohol)‐Dielectric Organic Field‐Effect Transistors Toward Memory Elements

Tsai

Chang

Wen

et al. 2013

Adv Funct Materials

119

114

View full text Add to dashboard Cite

The origins of hysteresis in organic fi eld-effect transistors (OFETs) and its applications in organic memory devices is investigated. It is found that the orientations of the hydroxyl groups in poly(vinyl alcohol) (PVA) gate dielectrics are correlated with the hysteresis of transfer characteristics in pentacene-based OFETs under the forward and backward scan. The applied gate bias partially aligns the orientations of the hydroxyl groups perpendicular to the substrate as characterized by refl ective absorption Fourier transform infrared spectroscopy (RA-FTIR), in which the fi eld-induced surface dipoles at the pentacene/PVA interface trap charges and cause the hysteresis. Treating PVA with an anhydrous solvent eliminates the residual moisture in the dielectrics layer, allowing for more effective control of the induced dipoles by the applied gate bias. OFETs of dehydrated-PVA dielectrics present a pronounced shift of the threshold voltage (Δ V Th ) of 35.7 V in transfer characteristics, higher than that of 18.5 V for untreated devices and results in suffi cient dynamic response for applications in memory elements. This work highlights the usage of non-ferroelectric gate dielectrics to fabricate OFET memory elements by manipulating the molecular orientations in the dielectrics layer.

show abstract

“…Previous studies have investigated the use of a number of materials for both the active layer and the gate dielectric in various TFT architectures. These efforts have highlighted the critical roles that interface effects, , material properties, , and processing play in determining device performance.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Organic Thin-Film Transistors Using Layer-by-Layer Assembly

et al. 2007

View full text Add to dashboard Cite

Layer-by-layer assembly is presented as a deposition technique for the incorporation of ultrathin gate dielectric layers into thin-film transistors utilizing a highly doped organic active layer. This deposition technique enables the fabrication of device structures with a controllable gate dielectric thickness. In particular, devices with a dielectric layer comprised of poly(allylamine hydrochloride)/poly(acrylic acid) (PAH/PAA) bilayer films were fabricated to examine the properties of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as the transistor active layer. The transistor Ion/off ratio and switching speed are shown to be controlled by the gate bias, which is dependent upon the voltage applied and the number of bilayers deposited for the gate dielectric. The devices operate in the depletion mode as a result of dedoping of the active layer with the application of a positive gate bias. The depletion and recovery rate are highly dependent on the level of hydration in the film and the environment under which the device is operated. These observations are consistent with an electrochemical dedoping of the conducting polymer during operation.

show abstract

Influence of gate dielectrics on electrical properties of F8T2 polyfluorene thin film transistors

Cited by 16 publications

References 18 publications

Gate Insulators in Organic Field-Effect Transistors

Gate Insulators in Organic Field-Effect Transistors

Manipulating the Hysteresis in Poly(vinyl alcohol)‐Dielectric Organic Field‐Effect Transistors Toward Memory Elements

Fabrication of Organic Thin-Film Transistors Using Layer-by-Layer Assembly

Contact Info

Product

Resources

About