Ferroelectric memories
based on hafnium oxide are an attractive
alternative to conventional memory technologies due to their scalability
and energy efficiency. However, there are still many open questions
regarding the optimal material stack and processing conditions for
reliable device performance. Here, we report on the impact of the
sputtering process conditions of the commonly used TiN top electrode
on the ferroelectric properties of Hf
1–
x
Zr
x
O
2
. By manipulating
the deposition pressure and chemistry, we control the preferential
orientation of the TiN grains between (111) and (002). We observe
that (111) textured TiN is superior to (002) texturing for achieving
high remanent polarization (
P
r
). Furthermore,
we find that additional nitrogen supply during TiN deposition leads
to >5× greater endurance, possibly by limiting the scavenging
of oxygen from the Hf
1–
x
Zr
x
O
2
film. These results help explain
the large
P
r
variation reported in the
literature for Hf
1–
x
Zr
x
O
2
/TiN and highlights the necessity of
tuning the top electrode of the ferroelectric stack for successful
device implementation.