Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors

Koswatta, Siyuranga O.; Lundstrom, Mark; Nikonov, Dmitri E.

doi:10.1063/1.2839375

Cited by 61 publications

(46 citation statements)

References 37 publications

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“…In the past, most graphene FETs have been fabricated using intrinsic nanometer-wide GNRs as channel material with metallic contacts [5][6][7]. More recently, however, FETs based on the principles of tunneling (TFETs henceforth) have been studied and attracted strong interest [8][9][10][11][12]. The commonly proposed graphene TFET structure uses an intrinsic GNR as the channel, with p-doped GNR as the source and n-doped GNR as the drain.…”

Section: Introductionmentioning

confidence: 99%

Graphene tunneling FET and its applications in low-power circuit design

Yang

Chauhan

Guo

et al. 2010

Proceedings of the 20th Symposium on Great Lakes Symposium on VLSI

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Graphene nanoribbon tunneling FETs (GNR TFETs) are promising devices for post-CMOS low-power applications because of the low subthreshold swing, high I on/Ioff, and potential for large scale processing and fabrication. This paper combines atomistic quantum transport modeling with circuit simulation to explore GNR TFET circuits for low-power applications. A quantitative study of the effects of variations on the performance and reliability of GNR TFET circuits is also presented. Simulation results indicate that GNR TFET circuits are extremely competitive in performance in comparison to conventional CMOS circuits at comparable operating points, with static power consumption that is lower by 8-9 orders of magnitude. It is also observed that GNR TFET circuits are susceptible to parameter variations, motivating engineering and design challenges to be addressed by the device and CAD communities.

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Section: Introductionmentioning

confidence: 99%

Graphene tunneling FET and its applications in low-power circuit design

Yang

Chauhan

Guo

et al. 2010

Proceedings of the 20th Symposium on Great Lakes Symposium on VLSI

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“…The impact of phonon scattering on the transfer characteristics of TFETs within the NEGF formalism has been discussed with more details in [58,86,87]. PH are dense matrices, so that all the entries of…”

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confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

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The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years, driven by the quest for a new electronic switch operating at a supply voltage well below 1 V and thus delivering substantial improvements in the energy efficiency of integrated circuits. This paper reviews several aspects related to physics based modeling in TFETs, and shows how the description of these transistors implies a remarkable innovation and poses new challenges compared to conventional MOSFETs. A hierarchy of numerical models exist for TFETs covering a wide range of predictive capabilities and computational complexities. We start by reviewing seminal contributions on direct and indirect band-to-band tunneling (BTBT) modeling in semiconductors, from which most TCAD models have been actually derived. Then we move to the features and limitations of TCAD models themselves and to the discussion of what we define non-self-consistent quantum models, where BTBT is computed with rigorous quantum-mechanical models starting from frozen potential profiles and closed-boundary Schrödinger equation problems. We will then address models that solve the open-boundary Schrödinger equation problem, based either on the non-equilibrium Green's function NEGF or on the quantum-transmitting-boundary formalism, and show how the computational burden of these models may vary in a wide range depending on the Hamiltonian employed in the calculations. A specific section is devoted to TFETs based on 2D crystals and van der Waals hetero-structures. The main goal of this paper is to provide the reader with an introduction to the most important physics based models for TFETs, and with a possible guidance to the wide and rapidly developing literature in this exciting research field.

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“…This is due to phonon absorption assisted transport dominating the off-state leakage (Fig. 2(b)) which allows carriers to leak out into the channel at higher energies above the valence band-edge in the source [8]. Therefore, additional gate bias is required to turn-off this tunneling mechanism leading to the "shoulder" type feature.…”

Section: D Broken-gap Tfet Operationmentioning

confidence: 99%

“…In recent years, the tunneling field-effect transistor (TFET) geometry has gained a lot of interest because of its potential for low power operation [1][2][3][4][5][6][7][8]. One major challenge for TFETs so far has been in achieving large drive currents, which is a prerequisite for high-performance applications.…”

Section: Introductionmentioning

confidence: 99%

1D broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing

Koswatta

Koester

Haensch

2009

2009 IEEE International Electron Devices Meeting (IEDM)

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We present a detailed study on the operation of a tunneling field-effect transistor (TFET) based on onedimensional broken-gap heterostructure geometry. Using numerical simulations we show that less than 60mV/dec subthreshold swing can be obtained in this device along with MOSFET-like drive-currents. We further demonstrate that the 1D geometry is uniquely suited for this device concept. Our model broken-gap TFET has a minimum swing of ~20mV/dec along with ~100x increase in above-threshold current compared to the homojunction geometry.

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Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors

Cited by 61 publications

References 37 publications

Graphene tunneling FET and its applications in low-power circuit design

Graphene tunneling FET and its applications in low-power circuit design

A review of selected topics in physics based modeling for tunnel field-effect transistors

1D broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing

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