“…Similar phenomenon was observed for ALD-ZrO 2 on GaN in our earlier publication (Ref. 21), which may share the same mechanisms of annihilation/formation of the interfacial layer discussed in this letter. On the other hand, it can be seen from Figs.…”
supporting
confidence: 83%
“…This could be due to surface Fermi-level pinning caused by interfacial oxide related defects, which is consistent with our earlier observations. 21 As a ternary III-nitride semiconductor, interfacial chemical bonding states between ZrO 2 and AlGaN could be more complicated compared to ZrO 2 /GaN. This is evidenced by the decrease or increase rate of area ratio upon annealing temperatures in Fig.…”
The effect of post-deposition annealing on chemical bonding states at interface between Al 0.5 Ga 0.5 N and ZrO 2 grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 C, which could be attributed to "clean up" effect of ALD-ZrO 2 on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle h is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through "clean up" effect near the interface. However, degradation of ZrO 2 /AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO 2 /AlGaN interface are easier to get oxidized as compared with Ga atoms. V C 2015 AIP Publishing LLC. [http://dx.
“…Similar phenomenon was observed for ALD-ZrO 2 on GaN in our earlier publication (Ref. 21), which may share the same mechanisms of annihilation/formation of the interfacial layer discussed in this letter. On the other hand, it can be seen from Figs.…”
supporting
confidence: 83%
“…This could be due to surface Fermi-level pinning caused by interfacial oxide related defects, which is consistent with our earlier observations. 21 As a ternary III-nitride semiconductor, interfacial chemical bonding states between ZrO 2 and AlGaN could be more complicated compared to ZrO 2 /GaN. This is evidenced by the decrease or increase rate of area ratio upon annealing temperatures in Fig.…”
The effect of post-deposition annealing on chemical bonding states at interface between Al 0.5 Ga 0.5 N and ZrO 2 grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 C, which could be attributed to "clean up" effect of ALD-ZrO 2 on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle h is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through "clean up" effect near the interface. However, degradation of ZrO 2 /AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO 2 /AlGaN interface are easier to get oxidized as compared with Ga atoms. V C 2015 AIP Publishing LLC. [http://dx.
“…5 . However, the capacitance began to decline when the annealing temperature reached at 600 °C, which can be ascribed to the formation of interfacial layers such as GaO x [ 19 ]. Fig.…”
GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from −4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10−9 A/cm2 at 1 V was obtained when O3 was used for the growth of ZrO2. Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.
“…Such upward band bending could be ascribe to the surface Fermi-level pinning caused by interfacial oxide related defects, which is consistent with our earlier observations. 8,20,23 In order to distinguish the difference on the roles between Ga and Al atoms during parasitic oxidation and facilitate the This could be attributed to that Al atoms, which have a higher reactivity, [24][25][26][27] are easier to be oxidized than Ga atoms at AlGaN surface during ALD process. In fact, the formation of the interfacial oxide layer for BOE treated AlGaN during the ALD can also be further confirmed by HR-TEM shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…By decreasing of h to shorten the probing depth, more sensitive analysis of chemical bonding states near the interface between ZrO 2 layer and Al 0.5 Ga 0.5 N substrate can be obtained. 8,20…”
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