Influence of sputtering power on the physical properties of magnetron sputtered molybdenum oxide films

Nirupama, V.; Uthanna, S.

doi:10.1007/s10854-009-9867-6

Cited by 26 publications

(17 citation statements)

References 23 publications

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“…Also shows that the film deposited at substrate temperature of 500 o C have the maximum value of conductivity. The variations of values in conductivity may be due to the oxygen vacancies in the prepared WO 3 thin films 21,[26][27][28] . The increasing of conductivity with the substrate temperature owing to the variation in morphology and the increasing of grain size, which reduced the lattice dislocations and imperfections of the W-O matrix.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Shanmugasundaram¹,

Thirunavukkarasu²,

Ramamurthy³

et al. 2017

Orient. J. Chem

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The n-type tungsten oxide (WO 3 ) polycrystalline thin films have been prepared at an optimized parameters (0.20M, 5 ml and 500 o C) using jet nebulizer spray pyrolysis (JNSP) technique. Such prepared WO 3 films were characterized by XRD, SEM, EDAX, UV-vis from I-V. The XRD pattern of the optimized WO 3 film reveals the monoclinic structure. The SEM and EDAX images shows that the surface morphological variations and elements present were confirmed. The optical properties were recorded by UV-vis spectrum and the maximum band gap value was observed as 3.86 eV for 500°C. The maximum conductivity of the prepared WO 3 was recorded as 1.201 x 10 -8 S/cm from I-V characterization for 500°C.Using J-V plot, the diode parameters of n-WO 3 /p-Si prepared at 500°C with 0.2 M and 5 ml were measured under dark and illumination. The ideality factor (n) and barrier height (Φ b ) values of n-WO 3 /p-Si diode are obtained as 5.8 and 0.80 eV in dark and 3.9 and 0.81 eV under illumination.

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Section: Electrical Propertiesmentioning

confidence: 99%

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Shanmugasundaram¹,

Thirunavukkarasu²,

Ramamurthy³

et al. 2017

Orient. J. Chem

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“…At low sputtering powers, the target current was low which attributed to the lower argon ion bombardment on the target surface due to lower ion flux results in low sputtering yield. The deposition rate of the films increased from 1.26 to 6.66 nm/ min with the increase of sputter power from 80 to 200 W. At higher sputtering powers, high argon ion flux generally resulted in substantial ion bombardment on the target with high kinetic energy which increased the probability that the impact of incident ions will eject more target atoms [15].…”

Section: Resultsmentioning

confidence: 99%

Surface Morphological and Electrical Properties of Sputtered Tio2 Thin Films

Thaidun¹

2013

IOSR-JAP

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“…Some of the molybdenum oxide compounds are thermodynamically stable normal phase of orthorhombic (a-MoO 3 ), metastable phase of monoclinic (b-MoO 3 ) and the hexagonal phase (h-MoO 3 ) [1][2][3][4][5][6][7][8]. The orthorhombic MoO 3 has a layered structure, containing two layers of octahedral MoO 6 , held together by double covalent forces in the a and c axes; contiguous layers are kept together along the b axes by Van der Waal's forces [6].…”

Section: Introductionmentioning

confidence: 99%

“…The orthorhombic MoO 3 has a layered structure, containing two layers of octahedral MoO 6 , held together by double covalent forces in the a and c axes; contiguous layers are kept together along the b axes by Van der Waal's forces [6]. MoO 3 thin films have attracted much interest for technological and industrial applications in recent years, including elements for energy efficient window technology, optical switching, coating high-density, memory devices, gas sensors, and lithium ion batteries [1][2][3][4][5][6][7][8][9][10][11][12]15]. In addition, the optical property of MoO 3 is higher than those of many other inorganic materials because the incorporator indicates stronger and more uniform absorption of light in its colored state [13].…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of nanocrystalline α-MoO3 thin films prepared at different annealing temperatures

2015

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Nanocrystalline a-MoO 3 thin films were prepared successfully by thermal annealing of molybdenum (Mo) thin films deposited on quartz and silicon substrates using DC magnetron sputtering method. The influence of annealing temperatures ranging from 400 to 1,000°C on the structural, morphological and optical properties of the prepared films was investigated by X-ray diffraction, Fourier transform infrared spectrophotometer (FTIR) atomic force microscopic and UV-vis spectroscopy, respectively. The results show that the crystallinity and surface morphology of the films are strongly dependent on the annealing temperature. Also, the optimum annealing temperature of Mo films in our experiment was 600°C and the films formed at this temperature exhibit only the (0k0) reflections and indicated the layered structure of a-MoO 3 . The FTIR spectra confirm the formation of MoO 3 . The transmittance of the MoO 3 films on quartz substrate was improved with increasing annealing temperature.

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Influence of sputtering power on the physical properties of magnetron sputtered molybdenum oxide films

Cited by 26 publications

References 23 publications

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Surface Morphological and Electrical Properties of Sputtered Tio2 Thin Films

Structural and optical properties of nanocrystalline α-MoO3 thin films prepared at different annealing temperatures

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