Influence of Stone-Wales defects on the mechanical properties of graphene-like polyaniline (PANI) C3N nanosheets

Ultrahigh thermal conductivity and strength in direct-gap semiconducting graphene-like BC6N: A first-principles and classical investigation

“…Nonetheless, among the aforementioned lattices, only the C3N shows a densely packed structure, and the rest include low-density nanoporous lattices. 2D polyaniline C3N is already known to show outstandingly high thermal conductivity [36,37,46,[38][39][40][41][42][43][44][45] and mechanical properties [47][48][49][50][51], stemming from its densely packed lattice and strong covalent interactions between carbon and nitrogen atoms. In contrast, the presence of nanoporosity in the atomic structure promotes phonon scattering and can lead to substantial suppression of lattice thermal conductivity, which has been theoretically confirmed [15,[52][53][54][55].…”

Stone–Wales Defect in Graphene

“…Moreover, the defective armchair C 3 N nanosheet was acquired to be more resistant as compared to the zigzag configuration. [ 95 ] Recently, the MD‐simulation‐based study conducted by Zhang et al. analyzed the influence of the SW and vacancy defects in fracture property (i.e., strength) of the defective graphene.…”

Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications

“…An example is the well-known Stone–Wales (SW) defects which exist in many materials, such as graphite, 112 graphene, 113 and polyaniline C 3 N nanosheets. 114 The SW defect is a type of topological defect generally occurring on carbon nanotubes and graphene, which was described by Anthony Stone and David Wales in 1986 during the isomerization of fullerenes. 115 Sometimes we also call it “Stone–Thrower–Wales” due to the fact that a rather similar defect was described earlier by Peter Thrower.…”