Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

“…The difference in the electron concentration measured with the Hall-effect-and capacitance measurements can be related to the specific features of the C-V measurements, which yield carrier concentration in a thin sub-surface (and graded-gap) layer with the thickness < 0.4 µm as counted from the insulator/semiconductor interface. It was shown that this concentration can greatly exceed that in the bulk of the material [27,28], presumably due to the fact that indium concentration increases with the graded-gap layer composition increasing (see inset in figure 1).…”