Influence of the deposition parameters on the properties of SnS2 films prepared by PECVD method combined with solid sources

Wang, Sheng-Ming; Wang, Shicai; Chen, Junfeng; Liu, Pei; Chen, Ming; Xiong, Hao; Guo, Fu; Liu, Minghai

doi:10.1007/s11051-014-2610-0

Cited by 21 publications

(9 citation statements)

References 32 publications

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“…Similar values of lattice constant were obtained in [15] for SnS 2 films deposited by the plasmachemical vacuum deposition method. The results of the determination of the CSD size in the films are presented in Table 1.…”

Section: A Voznyi Et Al / Materials Chemistry and Physics XXX (2016supporting

confidence: 79%

“…The band gap of SnS 2 changes in the range of 2.12e2.44 eV depending on the method of obtaining material and their polytype [7,8,11e13]. SnS 2 has n-type conductivity, a high optical absorption coefficient > 10 4 cm À1 [14,15], and relatively high charge carrier mobility of 18.3e230 cm 2 /V,s [7,8,16,17]. These properties make it promising for use in thin film solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…The advantages of SnS 2 are that it is non-toxic and its constituent elements (Sn and S) are cheap and Earthabundant. Tin disulfide thin films can be obtained using the following methods: ionic layer adsorption and reaction (SILAR) [18], spray pyrolysis [14,19e21], thermal vacuum evaporation [13,22], plasma-enhanced chemical vapour deposition (PECVD) [15], and dip coating [23]. Each of the methods of obtaining SnS 2 thin films has its advantages and disadvantages.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Structural and electrical properties of SnS2 thin films

Voznyi

Kosyak

Opanasyuk

et al. 2016

Materials Chemistry and Physics

103

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Section: A Voznyi Et Al / Materials Chemistry and Physics XXX (2016supporting

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural and electrical properties of SnS2 thin films

Voznyi

Kosyak

Opanasyuk

et al. 2016

Materials Chemistry and Physics

103

View full text Add to dashboard Cite

“…The absorption is more for high-energy photons in the recorded region for this SnS 2 material. A similar absorption co-efficient value had been reported by Wang et al [31].…”

Section: Optical Propertiessupporting

confidence: 89%

“…It has been observed that plateletshaped SnS 2 grains are found to increase in size with an increase in precursor concentrations. The definite and well-grown plate-like formation of grains was observed for the film prepared with the precursor concentration of 0.2 M. Similar platelet-shaped grains for SnS 2 films were observed in the earlier reports [13,31,32]. However, the surface morphology of the film prepared with the precursor concentration of 0.25 M is distinctly different from other SEM images.…”

Section: Surface Morphologysupporting

confidence: 85%

Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films

Anitha¹,

Anitha²,

Mohamed³

et al. 2018

Journal of Asian Ceramic Societies

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Tin disulfide thin films were prepared with different molarities of tin species (M Sn ) at the optimized substrate temperature using the Nebulized Spray pyrolysis technique to obtain better crystallinity with mono phase thin films. The concentration of Tin IV chloride Penta hydrate precursor is varied from 0.05:0.4 to 0.25:0.4 (SnCl 4 .5H 2 O: thiourea) to achieve correct stoichiometry and to tune the concentration of Tin ions in the SnS 2 thin films. These films were well adherent, uniform, and shiny. Lower concentrations of Tin yields highly textured SnS 2 thin films with (001) crystallite orientation. On increasing the concentration, the multi-phases (SnS and Sn 2 S 3 ) were found to be present along with SnS 2 material. The platelet-like grains were observed from SEM analysis in these SnS 2 films. Multiple interference effects were predominant in all these thin films in the wavelength region of 600-1100 nm. The direct optical band gap of tin disulfide thin films had decreased from 3.2 eV to 2.75 eV with an increase in M Sn from 0.05 to 0.2 M, respectively, and further increased to 3.0 eV for 0.25 M concentration. Using Hall Effect measurement, the type of semiconductor is found to be of n-type. A minimum resistivity value of 2.19 × 10 3 Ω cm was obtained for the film grown at M Sn = 0.2 M.ARTICLE HISTORY

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