Influence of the Edge Effects on the MESFET Transistor Characteristics

Mellal, Saida; Ch., Azizi; Zaabat, Mourad; Ziar, Toufik

doi:10.12816/0010329

Search citation statements

Order By: Relevance

Paper Sections

Select...

Results1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2017

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The development and the improvement of new dies of components require new results from modelling, new realisations and new characterisations [15]. In our study we have developed an analytical model to calculate the I-V characteristics of short gate length GaAs MESFET which takes into account the one-dimensional analysis of the charge distribution in the active region and incorporates a field depended electron mobility, velocity saturation and effect of these parameter to the current voltage expressions.…”

Section: Resultsmentioning

confidence: 99%

Effect of Mobility on (I-V) Characteristics of Gaas MESFET

Azizi¹,

Azizi²

2017

IJECE

View full text Add to dashboard Cite

We present in this paper an analytical model of the current-voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes into account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. We propose a new mobility model describing the electric field-dependent. The predictions of the simulator are compared with the experimental data [1] and have been shown to be good.

show abstract

Section: Resultsmentioning

confidence: 99%