Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET

Hao, Minru; Hu, Huiyong; Liao, Chenguang; Wang, Bin; Kang, Haiyan; Zhang, Heming

doi:10.1016/j.microrel.2017.06.018

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Stress Induced By Ionizing Radiation1

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2018

2024

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Cited by 4 publications

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“…Ionizing radiation induces the electrical degradation of AOS TFTs due to the formation of semiconductor channel defects, structural disorder, and trapped charges at the gate dielectric and semiconductor–dielectric interface. 128–130 The dominant radiation-induced channel defects are known to be oxygen vacancies. 131 Oxygen vacancies formed by radiation would act as shallow-donor states and/or deep-trap states.…”

Section: Stress Induced By Ionizing Radiationmentioning

confidence: 99%

Enhancement of electrical stability of metal oxide thin-film transistors against various stresses

Kim

2023

J. Mater. Chem. C

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Section: Stress Induced By Ionizing Radiationmentioning

confidence: 99%

Enhancement of electrical stability of metal oxide thin-film transistors against various stresses

Kim

2023

J. Mater. Chem. C

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Solution‐Processed Rad‐Hard Amorphous Metal‐Oxide Thin‐Film Transistors

Park

Kwon

et al. 2018

Adv Funct Materials

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The effect of 5 MeV high-energy proton irradiation on solution-processed metal-oxide thin-film transistors (TFTs) is investigated. The electrical characteristics of the devices are measured before and after proton irradiation with radiation doses of 10 13 , 10 14 , and 10 15 cm −2 . TFTs based on zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) exhibit a significant negative shift in their threshold voltage values (ΔV th ≤ −30 V) or transitioned to the conductor state as the proton radiation dose increased. For a-ZnO and IGZO, this change in the electrical characteristics originates from the formation of proton-irradiation-induced oxygen vacancies in the metaloxide semiconductor layer. On the other hand, amorphous zinc tin oxide devices with an optimized composition exhibit relatively stable electrical characteristics when subjected to proton irradiation. Furthermore, the backchannel passivation of oxide-semiconductor TFTs with an n-type organic semiconductor layer significantly improves the device stability under proton irradiation. This study demonstrates that solution-processed metal-oxide semiconductors have significant potential as rad-hard large area electronic devices for nuclear and aerospace applications.

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