1990
DOI: 10.1063/1.103453
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Infrared response from metallic particles embedded in a single-crystal Si matrix: The layered internal photoemission sensor

Abstract: Experimental and theoretical studies of angular resolved uv photoemission from singlecrystal surfaces of copper

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Cited by 52 publications
(17 citation statements)
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“…Nevertheless, despite the better performance of the polycrystalline diodes, their QE is lower than the values reported by Fathauer et al 5 for CoSi2. His device shows a QE of almost 1% at ?%=1.35 rim, whereas for our polycrystalline diodes it is 0.37%.…”
Section: Resultscontrasting
confidence: 72%
“…Nevertheless, despite the better performance of the polycrystalline diodes, their QE is lower than the values reported by Fathauer et al 5 for CoSi2. His device shows a QE of almost 1% at ?%=1.35 rim, whereas for our polycrystalline diodes it is 0.37%.…”
Section: Resultscontrasting
confidence: 72%
“…The nanoparticles, 10-50 nm in dimensions and lattice-matched to Si, were formed via columnar molecular beam epitaxy and their size can be tailored to support SPP resonances at wavelengths of interest [25]. Embedding nanoparticles in this manner allows detection of infrared radiation (λ 0 = 1-2 μm) via IPE [24,27] because the CoSi 2 nanoparticles form Schottky barriers at all interfaces with the Si, and as an SPP resonance on a nanoparticle decays, it generates hot carriers therein, leading to photocurrent [26]. The nanoparticles may become charged during illumination because they are not contacted to an electrode (i.e., they are "floating").…”
Section: Nanoparticle and Nanoantenna Detectorsmentioning
confidence: 99%
“…Detectors involving metal nanoparticles embedded, e.g., into Si [24][25][26][27] or GaAs [28,29] were among the first investigated. Figure 9.4a shows a sketch of a substrate-illuminated (infra-red) Co/p-Si Schottky diode with CoSi 2 nanoparticles embedded into single-crystalline Si [27].…”
Section: Nanoparticle and Nanoantenna Detectorsmentioning
confidence: 99%
“…Nano-dimensioned metal-semiconductor (Schottky-type) contacts are characterized by semishperical space charge regions of radial extension W S [25,26] (compare Fig. 3a)…”
Section: The In Situ Prepared Photovoltaic Devicementioning
confidence: 99%