Infrared spectroscopy of oxygen interstitials and precipitates in nitrogen-doped silicon

Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers

“…The transmittance spectra measured in this work were processed by the same procedure as used byŠtoudek et al [7] in order to obtain the pure absorption spectra of the SiO x precipitates. Multi-phonon absorption bands were removed from Si spectra by subtracting measured float zone Si spectrum containing a minimal amount of interstitial oxygen (8.6 Â 10 15 cm À 3 ).…”

“…[7,10]. In the model we assume that the precipitate has form of rotational ellipsoids with axes (a 1 ,a 3 ,a 3 ) aligned close to /100S directions.…”

“…Index of refraction for silicon crystal was calculated according to Ref. [11] as used byŠtoudek et al [7].…”

“…[7] determined by IR ellipsometry. The varying stoichiometry of SiO x particles was introduced in the vibrational optical modes as a linear combination of optical constants for SiO 2 and SiO using data retrieved from Ref.…”

Effect of nitrogen doping on nanomechanical and surface properties of silicon film

“…In the last few years, the use of nitrogen doping in silicon has been a topic of growing interest because the thin films of Si-nitride play an important role as dielectric and passivation layers in microelectronic devices, and they also appear to be very promising for use in many tribological applications and semiconductor applications due to the excellent mechanical and electrical properties of these films [1][2][3][4][5]. Doping by ion implantation is commonly used to fabricate these films.…”