InGaN/GaN MQW laser diodes with 4/sup th/ order FIB-etched gratings

Sanz, Dorleta Cortaberria; Rorison, Judy M; Yu, S.

doi:10.1109/qels.2005.1549017

Cited by 8 publications

(8 citation statements)

References 9 publications

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“…Previously, GaN DFB lasers have been realised by one of two approaches, buried [6] [7], or surface gratings [8]. Buried gratings require complex overgrowth steps which have the potential to introduce epi-defects.…”

Section: Introductionmentioning

confidence: 99%

InGaN/GaN Laser Diodes With High Order Notched Gratings

Slight

Yadav

Odedina

et al. 2017

IEEE Photon. Technol. Lett.

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Section: Introductionmentioning

confidence: 99%

InGaN/GaN Laser Diodes With High Order Notched Gratings

Slight

Yadav

Odedina

et al. 2017

IEEE Photon. Technol. Lett.

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“…There are several approaches that can be taken to fabricate a DFB laser such as buried gratings, surface gratings or shallow etched lateral gratings [5], [6]. However, here sidewall gratings in the InGaN/GaN material system are presented.…”

Section: Fabrication and Measurement Of Blue Dfb Lasermentioning

confidence: 99%

InGaN/GaN Laser Diodes and their Applications

Watson

Gwyn

Viola

et al. 2018

2018 20th International Conference on Transparent Optical Networks (ICTON)

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Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.

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“…Single wavelength lasers in the (Al,In)GaN material system have been realised in various ways including use of either buried [1] or surface gratings [5]. Buried gratings require complex overgrowth steps which have the potential to introduce growth defects while surface grating designs can compromise the quality of the p-type top contact.…”

Section: Introductionmentioning

confidence: 99%

Recent progress in distributed feedback InGaN/GaN laser diodes

Slight

Watson

Viola

et al. 2019

Novel in-Plane Semiconductor Lasers XVIII

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Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition.We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In)GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.

show abstract

InGaN/GaN MQW laser diodes with 4/sup th/ order FIB-etched gratings

Cited by 8 publications

References 9 publications

InGaN/GaN Laser Diodes With High Order Notched Gratings

InGaN/GaN Laser Diodes With High Order Notched Gratings

InGaN/GaN Laser Diodes and their Applications

Recent progress in distributed feedback InGaN/GaN laser diodes

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