Integrated reverse-recovery model of the power bipolar diode for SPICE3

Conway, Nicholas J; Lacy, Jack

doi:10.1049/el:19930933

Cited by 6 publications

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“…Several power diode models have been proposed for use in circuit simulators (Danielsson 1985, Liang and Gosbell 1990, Takakis 1992, Kvien et al 1993, Ma et al 1993, Strollo 1994, Conway and Lacy 1993, Persson 1991. which can be classi® ed into following three types based upon their implementation method, namely…”

Section: Introductionmentioning

confidence: 99%

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A fully-numerical model for PiN diodes implemented in the Saber circuit simulator

Li¹,

Mawby²

1998

International Journal of Electronics

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The integration of a full 1D numerical model for a power diode, into a commercial circuit simulator (Saber) is demonstrated for the ® rst time. The model is based upon the solution of the full set of device equations making very few simpli-® cations, thus retaining all the key elements of the physical operation of the device, and as such is therefore valid under all operating conditions. The model is veri® ed against experimental measurements and full 2D numerical simulations of the device. The method used here can also be applied to model other power devices, which exhibit charge storage e ects such as thyristors and IGBTs.

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Section: Introductionmentioning

confidence: 99%

“…(2) models implemented in stand-alone programs (Conway and Lacy 1993), and (3) physically based models implemented using a high level description language (HDL) (Kraus et al 1992, Ma et al 1993, Persson 1991.…”

Section: Introductionmentioning

confidence: 99%

A fully-numerical model for PiN diodes implemented in the Saber circuit simulator

Li¹,

Mawby²

1998

International Journal of Electronics

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“…Several research groups throughout the world have tried to advance the state of the art with respect to the status summarized in previous review articles [1], [2]. A number of new concepts for trimming the basic physical equations to the requirements of a power semiconductor device model for circuit simulation have been proposed [42], [43], [53], [69], [75], [101], [117], [119], [122], [129], [134], [140]. The special challenge in developing such models for circuit simulation results from the need to simultaneously fulfill contradicting requirements like high quantitative accuracy, low demand of computation power, and physical and easy accessible model parameters.…”

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confidence: 99%

Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

112

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Abstract-The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Recently, some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or longdue breakthroughs is on the other hand not expected in the foreseeable future.

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“…The third approach is transformation. Physics-based equations, like the Fick's law diffusion equation are typically differential equations that can be solved through the application of Laplace transformation [80,81] or Green's functions [82]. This approach is generally more exact compared with the functional approach but can get significantly more tedious depending on the boundaries of the problem.…”

Section: 62: Power Transistor Modelling Techniquesmentioning

confidence: 99%

Modelling of gallium nitride half-bridge converter

Yeo¹

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First and foremost, I'd like to thank God for guiding me through this difficult period of my life and for sending me the right people at the right time. This study would not have been possible if it were not for the guidance and support of people from both Robert Bosch Southeast Asia Private Limited and Nanyang Technological University. On Bosch's side, I'd like to thank the power electronics team and my other colleagues at Robert Bosch, in particular, Dr Pham, who has provided the necessary guidance to hone my programming skills and improve my publication quality. Special thanks also goes out to the other members of Bosch's power electronics team -Jan Riedal, Jitendra Solanki, Nima Saadat, He Maojun and Zaki Mohzani for providing me technical guidance and moral support throughout this study. I'd also like to thank Konstantin Spanos from Robert Bosch's Stuttgart-based power electronics department for introducing me to the basics of device characterisation and for advising on the printed circuit board layouts of both my prototype converters and my switch characterisation equipment. On the University's side, I'd like to thank Professor Tseng King Jet, who has provided insight and advice on device physics as well as which direction to steer my research. I wish him well in his new endeavour at the Singapore Institute of Technology. I'd like to also thank Jennifer from the Electric Power Research Lab for supporting me on administrative issues. Finally, I'd like to thank Professor Ali Maswood, who agreed to take me on after Professor Tseng left to see my study to completion. ContentsAcknowledgements.

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Integrated reverse-recovery model of the power bipolar diode for SPICE3

Cited by 6 publications

References 0 publications

A fully-numerical model for PiN diodes implemented in the Saber circuit simulator

A fully-numerical model for PiN diodes implemented in the Saber circuit simulator

Status and trends of power semiconductor device models for circuit simulation

Modelling of gallium nitride half-bridge converter

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