Integrating MBE materials with graphene to induce novel spin-based phenomena

Swartz, Adrian; McCreary, Kathleen M.; Han, Wei; Wong, Judith Ju‐Ming; Odenthal, Patrick; Wen, Hua; Chen, Jen-Ru; Kawakami, Roland; Hao, Yufeng; Ruoff, Rodney S.; Fabian, Jaroslav

doi:10.1116/1.4803843

Cited by 13 publications

(11 citation statements)

References 62 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…e.g. [92][93][94]) as well as corresponding theoretical works about substrates such as EuO and BiFeO 3 [95,96]. Let us mention that Ref.…”

Section: Theoretical Modelmentioning

confidence: 99%

Graphene nanoflakes in external electric and magnetic in-plane fields

Szałowski

2015

Journal of Magnetism and Magnetic Materials

View full text Add to dashboard Cite

The paper discusses the influence of the external in-plane electric and magnetic field on the ground state spin phase diagram of selected monolayer graphene nanostructures. The calculations are performed for triangular graphene nanoflakes with armchair edges as well as for short pieces of armchair graphene nanoribbons with zigzag terminations. The Mean Field Approximation (MFA) is employed to solve the Hubbard model. The total spin for both classes of nanostructures is discussed as a function of external fields for various structure sizes, for charge neutrality conditions as well as for weak charge doping. The variety of nonzero spin states is found and their stability ranges are determined. For some structures, the presence of antiferromagnetic orderings is predicted within the zero-spin phase. The process of magnetization of nanoflakes with magnetic field at constant electric field is also investigated, showing opposite effect of electric field at low and at high magnetic fields

show abstract

“…e.g. [92][93][94]) as well as corresponding theoretical works about substrates such as EuO and BiFeO 3 [95,96]. Let us mention that Ref.…”

Section: Theoretical Modelmentioning

confidence: 99%

Graphene nanoflakes in external electric and magnetic in-plane fields

Szałowski

2015

Journal of Magnetism and Magnetic Materials

View full text Add to dashboard Cite

show abstract

“…have explored the epitaxial growth of EuO on graphene, and discussed several possible scenarios for realizing exchange splitting with this magnetic insulator. While their graphene devices exhibit clearly the integer quantum Hall effect, no signature of magnetism in the form of AHE due to the proximity interaction with EuO could be observed [294,418]. On the other hand, these authors have also investigated the properties of the magnetic moments in graphene originating from localized pz-orbital defects created by adsorbed hydrogen atoms.…”

Section: 12! Graphene In Proximity To Fmismentioning

confidence: 99%

Hybrid spintronic materials: Growth, structure and properties

Liu

Wong

2019

Progress in Materials Science

View full text Add to dashboard Cite

Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or in addition to charge-only-based physical phenomena. Since the discovery of giant magnetoresistance (GMR) effect in metallic multilayers, the first-generation spintronics has generated huge impact to the mass data storage industries. The second-generation spintronics, on the other hand, focuses on the integration of the magnetic and semiconductor materials and so to add new capabilities to the electronic devices. While spin phenomena have long been investigated within the context of conventional ferromagnetic materials, the study of spin generation, relaxation, and spin-orbit coupling in non-magnetic materials took off only recently with the advent of hybrid spintronics and it is here many novel materials and architectures can find their greatest potentials in both science and technology. This article reviews recent progress of the research on a selection of hybrid spintronic systems including those based on ferromagnetic metal (FM) and alloys, half-metallic materials, and twodimensional (2D) materials. FM and alloys have spontaneous magnetization and usually high Curie temperature (Tc), half-metallic materials possess high spin polarization near the Fermi level (EF), and the 2D materials have unique band structures such as the Fermi Dirac cone and valley degree of freedom of the charge carriers. Enormous progress has been achieved in terms of synthesising the epitaxial hybrid spintronic materials and revealing their new structures and properties emerging from the atomic dimensions and the hetero-interfaces. Apart from the group-IV, III-V, and II-VI semiconductors and their nanostructures, spin injection and detection with 2D materials such as graphene, transition-metal dichalcogenides (TMDs) and topological insulators (TIs) has become a new trend and a particularly interesting topic due to either the long spin lifetime or strong spin-orbit coupling induced spinmomentum locking, which potentially leads to dissipationless electronic transport.

show abstract

“…It remains to be seen if this value also holds for functionalized graphene. By now, spin precession measurements of hydrogenated graphene suggest larger g-factors [129][130][131]. Of course, the most elegant way to circumvent this uncertainty is to give up on the non-local, steady state condition and apply time-resolved RF measurements which offer the possibility to directly determine the g-factor from time dependent spin precession.…”

Section: Determination Of Spin Lifetimesmentioning

confidence: 99%

Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

et al. 2015

View full text Add to dashboard Cite

In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our fabrication methods in more detail which result in distinctly different device performances. In the first class of devices, Co/MgO electrodes are directly deposited onto graphene which results in rough MgO-to-Co interfaces and favor the formation of conducting pinholes throughout the MgO layer. We show that the contact resistance area product (R c A) is a benchmark for spin transport properties as it scales with the measured spin lifetime in these devices indicating that contact-induced spin dephasing is the bottleneck for spin transport even in devices with large R c A values. In a second class of devices, Co/MgO electrodes are first patterned onto a silicon substrate. Subsequently, a graphene-hBN heterostructure is directly transferred onto these prepatterned electrodes which provides improved interface properties. This is seen by a strong enhancement of both charge and spin transport properties yielding charge carrier mobilities exceeding 20000 cm 2 /(Vs) and spin lifetimes up to 3.7 ns at room temperature. We discuss several shortcomings in the determination of both quantities which complicates the analysis of both extrinsic and intrinsic spin scattering mechanisms. Furthermore, we show that contacts can be the origin of a second charge neutrality point in gate dependent resistance measurements which is influenced by the quantum capacitance of the underlying graphene layer.

show abstract

Integrating MBE materials with graphene to induce novel spin-based phenomena

Cited by 13 publications

References 62 publications

Graphene nanoflakes in external electric and magnetic in-plane fields

Graphene nanoflakes in external electric and magnetic in-plane fields

Hybrid spintronic materials: Growth, structure and properties

Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

Contact Info

Product

Resources

About