Integration of capacitor for sub-100-nm DRAM trench technology

Influence of growth temperature on the structure and electrical properties of high‐permittivity TiO2 films in TiCl4‐H2O and TiCl4‐O3 atomic‐layer‐deposition processes

“…As the 3D structures require a synthesis method that could yield dielectric layers with a high degree of conformity, the atomic-layer-deposition (ALD) technique has been considered to be the most suitable one for this application. In previous works, very high-k values for SrTiO 3 have been measured [4] but the growth process of this material in the proper stoichiometry by ALD is still quite complicated. Fortunately, high k values have been obtained also for rutilephase TiO 2 [5][6][7][8] that can be synthesized by using more robust methods.…”

“…In contrast to the deposition methods for SrTiO 3 , ALD processes of TiO 2 are well developed and no obvious difficulties are expected in adopting these processes in mass production. So it is very possible that TiO 2 -based dielectrics will be used in the nextgeneration DRAM capacitors.…”

“…Vapors of the precursor and solvent were transported to the deposition chamber using argon mixed with oxygen that served as a reactant gas. In some experiments Ru(thd) 3 as an alternative Ru precursor was used for deposition of RuO 2 .…”

Alternate hammering test for application-specific DRAMs and an industrial case study

“…Compared to the research publications on advancing the DRAM process technologies, such as trench [1] [2] [3], metalinsulator-metal [4] [5] [6], or embedded DRAM (eDRAM) [7] [8] [9], the publications on the DRAM fault models or test algorithms are relatively limited during the past decade. [10] and [11] shared their industrial experience on constructing DRAM test and testing eDRAM, respectively, but did not discuss the fault models covered by their test methods.…”

Augmented Cell Performance of NO-Based Storage Dielectric by N<formula formulatype="inline"><tex>$_2$ </tex></formula>O-Treated Nitride Film for Trench DRAM

“…This challenge has resulted in an unprecedented industry-wide effort to establish an advanced scheme for improving the existing process. For the cell capacitor technology, the hemispherical silicon grain (HSG) [1] and [2] and high-k material [3], [4] have been extensively discussed because of their enhanced surface area and dielectric constant. For trench DRAMs, high-k materials such as Al 2 O 3 or HfSiON are important candidates for future storage dielectrics.…”