Integration of green CuInS_2/ZnS quantum dots for high-efficiency light-emitting diodes and high-responsivity photodetectors

Li, Feng; Guo, Chenyang; Pan, Rui; Zhu, Yu; You, Lai; Wang, Jun; Jin, Xiao; Qin, Zhang; Ye, Song; Chen, Zhongping; Li, Qinghua

doi:10.1364/ome.8.000314

Cited by 24 publications

(12 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, the redshift of peak emission of the electroluminescent QLEDs often occurs owing to the temperature rise resulting from an increasing voltage or current, which has been reported. However, with applied voltage increasing from 4 to 10 V, the redshift of the EL spectra of the QLEDs based on CuInS 2 /ZnS QDs is distinguishable [21]. Here, the EL of our devices also shows a slightly perceptible redshift, as can be seen from Figure 4(b).…”

Section: Tbp Treatment Andsupporting

confidence: 48%

See 1 more Smart Citation

Bright Alloy CdZnSe/ZnSe QDs with Nonquenching Photoluminescence at High Temperature and Their Application to Light-Emitting Diodes

Zhang

Yang

et al. 2019

Journal of Nanomaterials

Self Cite

View full text Add to dashboard Cite

Stable luminance properties are essential for light-emitting devices with excellent performance. Thermal photoluminescence (PL) quenching of quantum dots (QDs) under a high temperature resulting from a surface hole or electron traps will lead to unstable and dim brightness. After treating CdZnSe/ZnSe QDs with TBP, which is a well-known passivation reagent of the anions, the excess Se sites on the surface of the QDs were removed and their PL quantum yields (QYs) was improved remarkable. Furthermore, after TBP treatment, the CdZnSe/ZnSe QDs exhibit no quenching phenomena even at a high temperature of 310°C. The electroluminescent light-mitting diodes based on the QDs with TBP treatment also demonstrated satisfied performance with a maximum current density of 1679.6 mA/cm 2 , a peak luminance of 89500 cd/m 2 , and the maximum values of EQE and luminescence efficiency are 15% and 14.9 cd/A, respectively. The performance of the fabricated devices can be further improved providing much more in-depth studies on the CdZnSe/ZnSe QDs.

show abstract

Section: Tbp Treatment Andsupporting

confidence: 48%

“…Device Fabrication. QLEDs were fabricated following the similar procedures reported in [21]. Firstly, indium-tin oxide (ITO) glass substrates were cleaned by using of ultrasonic treatment followed by being dried under a N 2 flow and then etched in a UV ozone for 20 min.…”

Section: 5mentioning

confidence: 99%

Bright Alloy CdZnSe/ZnSe QDs with Nonquenching Photoluminescence at High Temperature and Their Application to Light-Emitting Diodes

Zhang

Yang

et al. 2019

Journal of Nanomaterials

Self Cite

View full text Add to dashboard Cite

show abstract

“…Combined with the efficient electroluminescent performance, bifunctional devices based on such materials are highly feasible. The past researches on the CIS QDs demonstrate their applications as electroluminescent LEDs − as well as light-responsive photodetectors (PDs) − or photovoltaics (PV). − However, no bifunctional device has been reported mainly due to lack of energy band alignment modulation. Recently, hydroxyl-terminated CIS QDs are synthesized through in situ ligand exchange, the electrical band structure of these QDs can be adjusted with the short-chain 6-mercaptohexanol (MCH), enhancing both the charge injection and extraction, enabling the demonstration for bifunctional devices. , …”

Section: Introductionmentioning

confidence: 99%

Balanced Carrier Injection and Charge Separation of CuInS₂ Quantum Dots for Bifunctional Light-Emitting and Photodetection Devices

et al. 2020

View full text Add to dashboard Cite

The ligand exchange of 6-mercaptohexanol on the surface CuInS 2 quantum dots not only improves their solution processability in alcoholic solvents such as methanol, ethanol, and N,N-dimethylformamide but also modulates their electrical band gap and thus the charge injection and extraction at the charge transport interfaces. Bifunctional light-emitting and photodetection devices based on these alcohol-soluble CuInS 2 quantum dots are realized adopting an inverted structure with ZnO as the electron transport layer and poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4′-(N-(4-butylphenyl)diphenylaminel)] and poly(3,4-ethylenedioxythiophene):polystyrenesulfonate as the hole transport layers. The optimized device with selected active layer thickness exhibits red emission at 647 nm with a maximum luminance of 1600 cd/m 2 under forward bias and works as a photodetector at zero bias with a maximum responsibility of 0.53 mA/W and detectivity of 2.5 × 10 10 jones. Furthermore, with interface engineering of the polyethylenimine ethoxylated (PEIE) layer at the electron transport side, more balanced charge injection is achieved, leading to reducing electroluminescence roll-off effect. The insulating PEIE layer also blocks the current leakage, giving rise to reduced dark current and improved detectivity of 3.5 × 10 10 jones. The effective bidirectional charge transfer achieved under simplified device design using the alcohol-soluble quantum dots brings a new candidate for multifunctional devices.

show abstract

“…26 The ZnS shell also blues shift spectra by limiting excited state energy. 34 In addition, the defects formed by nonstoichiometric show adjustment in emissive spectra of QDs as well, serve as radiative recombination centers. For instance, the defects in CuAl 5 S 8 / ZnS QDs provided a recombination channel from I Cu /Al Cu to V Cu /V Al , leading to the strong emission at 470 nm.…”

Section: ■ Introductionmentioning

confidence: 99%

I–III–VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

et al. 2023

View full text Add to dashboard Cite

Quantum dots (QDs) are important frontier luminescent materials for future technology in flexible ultrahigh-definition display, optical information internet, and bioimaging due to their outstanding luminescence efficiency and high color purity. I− III−VI QDs and derivatives demonstrate characteristics of composition-dependent band gap, full visible light coverage, high efficiency, excellent stability, and nontoxicity, and hence are expected to be ideal candidates for environmentally friendly materials replacing traditional Cd and Pb-based QDs. In particular, their compositional flexibility is highly conducive to precise control energy band structure and microstructure. Furthermore, the quantum dot light-emitting diodes (QLEDs) exhibits superior prospects in monochrome display and white illumination. This review summarizes the recent progress of I−III−VI QDs and their application in LEDs. First, the luminescence mechanism is illustrated based on their electronic-band structural characteristics. Second, focusing on the latest progress of I−III−VI QDs, the preparation mechanism, and the regulation of photophysical properties, the corresponding application progress particularly in light-emitting diodes is summarized as well. Finally, we provide perspectives on the overall current status and challenges propose performance improvement strategies in promoting the evolution of QDs and QLEDs, indicating the future directions in this field.

show abstract

Integration of green CuInS_2/ZnS quantum dots for high-efficiency light-emitting diodes and high-responsivity photodetectors

Cited by 24 publications

References 36 publications

Bright Alloy CdZnSe/ZnSe QDs with Nonquenching Photoluminescence at High Temperature and Their Application to Light-Emitting Diodes

Bright Alloy CdZnSe/ZnSe QDs with Nonquenching Photoluminescence at High Temperature and Their Application to Light-Emitting Diodes

Balanced Carrier Injection and Charge Separation of CuInS₂ Quantum Dots for Bifunctional Light-Emitting and Photodetection Devices

I–III–VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

Contact Info

Product

Resources

About

Integration of green CuInS_2/ZnS quantum dots for high-efficiency light-emitting diodes and high-responsivity photodetectors

Cited by 24 publications

References 36 publications

Bright Alloy CdZnSe/ZnSe QDs with Nonquenching Photoluminescence at High Temperature and Their Application to Light-Emitting Diodes

Bright Alloy CdZnSe/ZnSe QDs with Nonquenching Photoluminescence at High Temperature and Their Application to Light-Emitting Diodes

Balanced Carrier Injection and Charge Separation of CuInS2 Quantum Dots for Bifunctional Light-Emitting and Photodetection Devices

I–III–VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

Contact Info

Product

Resources

About

Balanced Carrier Injection and Charge Separation of CuInS₂ Quantum Dots for Bifunctional Light-Emitting and Photodetection Devices