Interaction of hydrogenated amorphous silicon films with transparent conductive films

Kitagawa, Masatoshi; Mori, K.; Ishihara, Shin-ichiro; Ohno, Masaharu; Hirao, Takashi; Yoshioka, Yoshiaki; Kohiki, Shigemi

doi:10.1063/1.332436

Cited by 67 publications

(8 citation statements)

References 4 publications

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“…To explain the formation of the metallic In precipitates, we considered the chemical reduction of In 2 O 3 . It has been reported that indium‐oxide‐based TCO films are relatively readily reduced by exposure to a strongly reducing environment such as hydrogen plasma and that metal precipitates can be formed as a result . As we applied a negative bias to the cells in our PID tests, the cells corresponded to the cathode in oxidation‐reduction reactions.…”

Section: Discussionmentioning

confidence: 99%

Comprehensive study of potential‐induced degradation in silicon heterojunction photovoltaic cell modules

Yamaguchi

Yamamoto

Ohdaira

et al. 2018

Progress in Photovoltaics

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Accelerated tests were used to study potential‐induced degradation (PID) in photovoltaic (PV) modules fabricated from silicon heterojunction (SHJ) solar cells containing tungsten‐doped indium oxide (IWO) transparent conductive films on both sides of the cells and a rear‐side emitter. A negative bias of −1000 V was applied to a module with respect to the cover glass surface in a chamber maintained at 85°C, which significantly reduced the cell's short‐circuit current density (Jsc) within several days. Based on dark current density‐voltage and external quantum efficiency measurements, the reduction in the Jsc was attributed to optical losses rather than carrier recombination. X‐ray absorption fine structure spectroscopy showed the formation of metallic indium (In) in the IWO layers of a degraded cell, which suggests that the root cause of the optical loss was a darkening of the front IWO layers caused by the precipitation of metallic In. In extremely severe PID tests, the SHJ PV modules exhibited not only a further reduction in the Jsc but also a moderate reduction in the open‐circuit voltage (Voc). These Jsc and Voc reductions were probably caused by sodium being introduced into the base region of the cells. A comparison of the PID test results of the SHJ PV modules with those of other types of PV modules indicates that SHJ PV modules have a relatively high resistance to PID. As a module with an ionomer encapsulant exhibited little degradation, their high resistances to PID may be further improved by using encapsulants with high electrical resistances.

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Section: Discussionmentioning

confidence: 99%

Comprehensive study of potential‐induced degradation in silicon heterojunction photovoltaic cell modules

Yamaguchi

Yamamoto

Ohdaira

et al. 2018

Progress in Photovoltaics

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“…IOH and ITO layers were covered by a thin sputtered aluminum-doped ZnO layer of thickness t ¼ 20 nm which serves as a protective barrier layer against the hydrogen-rich plasma during the subsequent cell deposition. [25][26][27] This ZnO layer influences neither the optical nor the electrical measurements on the IOH and ITO films observably, as its much lower carrier density renders it very transparent and much more resistive than IOH and ITO. As ZnO also has a similar refractive index as IOH and ITO, no signficant reflection occurs at the IOH-ZnO and ITO-ZnO interface.…”

Section: à6mentioning

confidence: 99%

Micromorph thin-film silicon solar cells with transparent high-mobility hydrogenated indium oxide front electrodes

Battaglia

Erni

Boccard

et al. 2011

Journal of Applied Physics

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We investigate the performance of hydrogenated indium oxide as a transparent front electrode for micromorph thin-film silicon solar cells on glass. Light trapping is achieved by replicating the morphology of state-of-the-art zinc oxide electrodes, known for their outstanding light trapping properties, via ultraviolet nanoimprint lithography. As a result of the high electron mobility and excellent near-infrared transparency of hydrogenated indium oxide, the short-circuit current density of the cells is improved with respect to indium tin oxide and zinc oxide electrodes. We assess the potential for further current gains by identifying remaining sources of parasitic absorption and evaluate the light trapping capacity of each electrode. We further present a method, based on nonabsorbing insulating silicon nitride electrodes, allowing one to directly relate the optical reflectance to the external quantum efficiency. Our method provides a useful experimental tool to evaluate the light trapping potential of novel photonic nanostructures by a simple optical reflectance measurement, avoiding complications with electrical cell performance.

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“…In case of W-textured FTO samples, thin ZnO:Al was deposited by sputtering on FTO before cell fabrication in order to avoid SnO 2 reduction by atomic H [27]. illumination.…”

Section: Mc-si:h Cell Fabricationmentioning

confidence: 99%

New method to measure whole-wavelength transmittance of TCO substrates for thin-film silicon solar cells

Isshiki

Sichanugrist

Abe

et al. 2014

Current Applied Physics

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Interaction of hydrogenated amorphous silicon films with transparent conductive films

Abstract: A real time ellipsometry study of the growth of amorphous silicon on transparent conducting oxides Effect of the surface condition on the conductance of hydrogenated amorphous silicon

Cited by 67 publications

References 4 publications

Comprehensive study of potential‐induced degradation in silicon heterojunction photovoltaic cell modules

Comprehensive study of potential‐induced degradation in silicon heterojunction photovoltaic cell modules

Micromorph thin-film silicon solar cells with transparent high-mobility hydrogenated indium oxide front electrodes

New method to measure whole-wavelength transmittance of TCO substrates for thin-film silicon solar cells

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