Interfacial X-ray photospectrometry study of In _0.53 Ga _0.47 As under different passivation treatments for metal oxide semiconductor field effect transistor devices

Abstract

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Threshold voltage study of scaled self‐aligned In 0.53 Ga 0.47 As metal oxide semiconductor field effect transistor for different source/drain doping concentrations

“…In the present work, by using CV measurements with the HF‐LF method [23], the D it value of ∼5.8 × 10 12 eV −1 cm −2 was calculated, which is considered as a high value leading to less control in the charge diffusion. In all cases, negative shift in V th is not favourable and needs to be controlled by the lower thermal budget [22] and the improved passivation method [17].…”

“…The first layer as the buffer layer was p‐type C‐doped (1 × 10 19 /cm 3 ) with the thickness of 500 nm and the second layer as a top layer was C‐doped (1 × 10 17 /cm 3 ) with the thickness of 300 nm. Wet preparation by NH 4 OH was employed before oxide deposition to clean the surface [17]. Then, the oxide layer of Al 2 O 3 with 8 nm thickness was deposited using the ALD (BENEQ‐TFS200) technique, while substitution pulsing of the liquid precursor of trimethylaluminium and H 2 O was executed at 300°C.…”

“…The S / D access resistance should be low to supress lowering of on‐state current because of the gate width [16]. Some simulation results for the InGaAs devices with a high doping concentration channel showed a depletion in the S / D regions [17], which increases the access resistance. In this matter, a study of MOSFETs' parameters, for example, threshold voltage ( V th ), for different S / D doping concentrations is considered in this present Letter.…”