Threshold voltage study of scaled self‐aligned In _0.53 Ga _0.47 As metal oxide semiconductor field effect transistor for different source/drain doping concentrations

Abstract

A multi-gate n-type In 0.53 Ga 0.47 As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology with an 8 nm thick Al 2 O 3 oxide layer. By scaling the gate length down to 200 nm, the effect of two different source/drain doping concentrations on device parameters such as threshold voltage, I on /I off ratio and subthreshold swing were investigated at room temperature. Increasing the value of the source/drain doping concentration revealed an enhancement in all investigated parameters. Sheet resistance and contact resistance values were improved as well. The negative shift in threshold voltage for shorter gate lengths was observed for both source/drain concentrations; however, the shift in threshold voltage was less (∼0.4 V) for the higher source/drain doping concentration.

Влияние фтора на плотность состояний на границе раздела анодный оксидный слой/In-=SUB=-0.53-=/SUB=-Ga-=SUB=-0.47-=/SUB=-As

“…In 0.53 Ga 0.47 As применяется для изготовления МОПтранзисторов (МОП -металл−оксид−полупроводник) с высокой подвижностью электронов [1,2], при реализации которых одним из основных требований является низкая плотность электронных состояний (D it ) на границе раздела диэлектрик/InGaAs [3]. В настоящее время для формирования таких границ в основном используется ex situ метод атомно-слоевого осаждения high-k диэлектриков, таких как Al 2 O 3 [4,5], HfO 2 [6], Y 2 O 3 [7], La 2 O 3 [8] и других [3], в сочетании с различными предварительными химическими обработками поверхности полупроводника, а также условиями осаждения диэлектрических слоев и их последующего отжига.…”

The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface

“…The In 0.53 Ga 0.47 As compound is used in production of high-electron-mobility metal-oxide-semiconductor (MOS) transistors [1,2], in which one of the main requirements is the low electronic density of states (D it ) at the insulator/InGaAs interface [3]. At present, such interfaces are mainly formed by ex situ atomic layer deposition of high-κ insulators, e.g., Al 2 O 3 [4,5], HfO 2 [6], Y 2 O 3 [7], and La 2 O 3 [8], among others [3], in combination with various chemical pretreatments of the semiconductor surface and conditions of deposition of insulator layers and their subsequent annealing.…”