Intrinsic switching variability in HfO&lt;inf&gt;2&lt;/inf&gt; RRAM

Fantini, A.; Goux, L.; Degraeve, R.; Wouters, Dirk J.; Raghavan, Nagarajan; Kar, Gouri Sankar; Belmonte, Attilio; Chen, Y.-Y; Govoreanu, B.; Jurczak, M.

doi:10.1109/imw.2013.6582090

Cited by 139 publications

(115 citation statements)

References 2 publications

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“…However, it is also recognized that the stochastic RRAM switching mechanisms introduce large variability in device parameters and impose severe challenges for memory applications [1], [2]. The variation in switching voltage degrades writing voltage margin and the resistance variation reduces sensing margin.…”

Section: Introductionmentioning

confidence: 99%

Utilizing the Variability of Resistive Random Access Memory to Implement Reconfigurable Physical Unclonable Functions

Chen

2015

IEEE Electron Device Lett.

177

101

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The stochastic switching mechanism and intrinsic variability of resistive random access memory (RRAM) present severe challenges for memory applications, which, however, may be utilized to implement the physical unclonable function (PUF) for hardware security. A PUF based on RRAM resistance variability is proposed in this letter. Unlike PUFs based on manufacturing variation, this proposal exploits an intrinsic variability in physical mechanisms with reconfigurability. Key characteristics of the PUF design are assessed by simulation using measured RRAM properties and device model. Truly random variation of RRAM resistance is critical for PUF uniqueness (or unclonability). The reliability (or robustness) of the proposed PUF is affected by temperature and voltage dependence of RRAM resistance as well as retention characteristics. Large separation between inter-chip and intra-chip Hamming distance as the measure of uniqueness and reliability confirms the feasibility of the PUF proposal.

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Section: Introductionmentioning

confidence: 99%

Utilizing the Variability of Resistive Random Access Memory to Implement Reconfigurable Physical Unclonable Functions

Chen

2015

IEEE Electron Device Lett.

177

101

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“…10,11 However, precise control over the resistance of the different resistance levels should be assured for reliable MLC operation especially for RRAM, which is known to suffer from variability and reliability issues due to certain randomness in its switching process. [12][13][14] In RRAM, MLC characteristics can be obtained by various methods such as by varying the switching current (or compliance current), where different levels of low resistance state (LRS) can be obtained due to change in the total number of constituent defects of the conductive filament (CF) or by controlling the maximum reset voltage during reset operation which can result different levels of high resistance state (HRS) due to variation in the gap between CF tip and metal electrode. 10,11 MLC behavior by varying the program/ erase pulse width is also reported.…”

mentioning

confidence: 99%

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

Prakash

Deleruyelle

Song

et al. 2015

Applied Physics Letters

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In order to obtain reliable multilevel cell (MLC) characteristics, resistance controllability between the different resistance levels is required especially in resistive random access memory (RRAM), which is prone to resistance variability mainly due to its intrinsic random nature of defect generation and filament formation. In this study, we have thoroughly investigated the multilevel resistance variability in a TaOx-based nanoscale (<30 nm) RRAM operated in MLC mode. It is found that the resistance variability not only depends on the conductive filament size but also is a strong function of oxygen vacancy concentration in it. Based on the gained insights through experimental observations and simulation, it is suggested that forming thinner but denser conductive filament may greatly improve the temporal resistance variability even at low operation current despite the inherent stochastic nature of resistance switching process.

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“…16(c) and [21,22]. This phenomenon may be attributed to the variation of the filament formation after the verify-set, which causes large variation of the filament rupture after the verify-reset.…”

Section: Speculation Of the Physics During The Set-before-reset Programmentioning

confidence: 98%

50 nm Al O ReRAM program 31% energy, 1.6× endurance, and 3.6× speed improvement by advanced cell condition adaptive verify-reset

Ning

Iwasaki

Takeuchi

2015

Solid-State Electronics

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Intrinsic switching variability in HfO<inf>2</inf> RRAM

Cited by 139 publications

References 2 publications

Utilizing the Variability of Resistive Random Access Memory to Implement Reconfigurable Physical Unclonable Functions

Utilizing the Variability of Resistive Random Access Memory to Implement Reconfigurable Physical Unclonable Functions

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

50 nm Al O ReRAM program 31% energy, 1.6× endurance, and 3.6× speed improvement by advanced cell condition adaptive verify-reset

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