This paper reports the design, fabrication and characterization of a novel power inductor embedded inside a silicon substrate and fabricated at wafer level. Such power inductors in silicon (PIiS) fully explore the capability of forming high-aspect-ratio silicon molds by DRIE for large-cross-section copper winding plating (as thick as the silicon wafers) while also utilizing high-resistivity magnetic composites. By completely using electroplating processes to form the copper coils and vias, the contact resistance between conductive layers can be minimized, and the quality factor can be improved significantly. This process also provides surface mounting pads for a compact converter assembly. Square shaped spiral inductors (3×3×0.83mm 3 ) were successfully fabricated, achieving a large inductance (430 nH), low DC resistance (84 mΩ), and high quality factor (21) at 6 MHz. The fabricated inductors were also assembled with a TI TPS62621 buck converter IC, and an efficiency of 83% was achieved.