2008
DOI: 10.1109/jssc.2008.2005451
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Investigation and Design of On-Chip Power-Rail ESD Clamp Circuits Without Suffering Latchup-Like Failure During System-Level ESD Test

Abstract: On-chip power-rail electrostatic discharge (ESD) protection circuit designed with active ESD detection function is the key role to significantly improve ESD robustness of CMOS integrated circuits (ICs). Four power-rail ESD clamp circuits with different ESD-transient detection circuits were fabricated in a 0.18-m CMOS process and tested to compare their system-level ESD susceptibility, which are named as power-rail ESD clamp circuits with typical RC-based detection, PMOS feedback, NMOS+PMOS feedback, and cascad… Show more

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Cited by 52 publications
(22 citation statements)
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“…. Typically power supply ramp rates of 1-100 Ils are utilized to analyze the clamp mis-triggering behavior [7][8]. Figure 3 …”
Section: IIImentioning
confidence: 99%
“…. Typically power supply ramp rates of 1-100 Ils are utilized to analyze the clamp mis-triggering behavior [7][8]. Figure 3 …”
Section: IIImentioning
confidence: 99%
“…These advances have hitherto resulted in further miniaturization and performance improvement, but malfunctions and breakdowns owing to electrostatic discharges under normal operating conditions have become critical issues [1]. Therefore, novel electrostatic discharge protection circuits need to be developed.…”
Section: Introductionmentioning
confidence: 99%
“…Proposed ESD Protection Circuit 1. Circuit Simulation Figure 1 shows a cross-section of the proposed ESD protection circuit and its equivalent circuit.…”
Section: Introductionmentioning
confidence: 99%
“…Electrostatic Discharge (ESD) is one of the most important reliability issues in CMOS integrated circuit (IC) products [1]. As technology scales down, the ESD phenomenon has become a greater threat for deep-sub-micron ICs, due to their thinner gate oxide and shallow junction depths.…”
Section: Introductionmentioning
confidence: 99%