Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Ho, Shinn‐Ying; Chang, Ting Chang; Wu, Chi Wei; Lo, Wen Hung; Chen, Ching En; Tsai, Jyun Yu; Liu, Guan Ru; Chen, Hua Mao; Lu, Y. S.; Wang, Bin Wei; Tseng, Tseung‐Yuen; Cheng, Osbert; Huang, Cheng Tung; Sze, Simon M.

doi:10.1063/1.4773479

Cited by 15 publications

(4 citation statements)

References 17 publications

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“…With the demand of multi-functional electronic devices increasing greatly in the world, the investigation of device physics will be important for IC industry [ 1 ]. Furthermore, the multi-functional portable electronic products should integrate with memory [ 2 - 24 ], display [ 25 - 49 ], logic devices [ 50 - 57 ], and functional devices (e.g. sensor) [ 58 , 59 ] according to device physics and fabrication technology.…”

Section: Reviewmentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

et al. 2015

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In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

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Section: Reviewmentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

et al. 2015

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View full text Add to dashboard Cite

show abstract

“…With the demand of multi-functional electronic devices increasing greatly in the world, the investigation of device physics will be important for IC industry [1]. Furthermore, the multi-functional portable electronic products should integrate with memory , display , logic devices [50][51][52][53][54][55][56][57], and functional devices (e.g. sensor) [58,59] according to device physics and fabrication technology.…”

Section: Introductionmentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

Chang¹,

Chang²,

Tsai³

et al. 2016

Nano Online

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In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO 2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

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“…To achieve high speed, low gate leakage current, and power consumption, the continuous scaling down of metal oxide semiconductor field electrical field transistors (MOSFETs) is driving toward using high-k dielectric. [10][11][12][13][14] However, charge trapping in high-k gate stacks remains a key reliability issue, since it causes threshold voltage (V TH ) shift and drive current degradation [15][16][17][18] due to the filling of pre-existing high-k bulk defects. [19][20][21] Additionally, the issue of charge trapping effect has been found to have a great impact on hot carrier degradation (HCD), since hot carriers tend to be injected into the high-k layer, especially in short channel devices.…”

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confidence: 99%

Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

Tsai

Chang

Chen

et al. 2014

Applied Physics Letters

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This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks. V

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Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Cited by 15 publications

References 17 publications

Physical and chemical mechanisms in oxide-based resistance random access memory

Physical and chemical mechanisms in oxide-based resistance random access memory

Physical and chemical mechanisms in oxide-based resistance random access memory

Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

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