Investigation of defects in sputtered W/B4C multilayers

Jiang, Hui; Yan, Shuai; Zhu, Jun; Zheng, Yi; He, Yumei; Li, Aiguo

doi:10.1016/j.apsusc.2015.09.161

Cited by 3 publications

(1 citation statement)

References 21 publications

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“…(see Refs. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] and references there in). Theoretically, the spin-1/2 (see Refs.…”

Section: Introductionmentioning

confidence: 99%

Influences of Crystal-Field and Interlayer Coupling Interactions on Dynamic Phase Diagrams of a Mixed-Spin (3/2,2) Bilayer System

Keskín¹,

Koçak²

2018

Commun. Theor. Phys.

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Influences of crystal-fields (DA and DB) and interlayer coupling interactions (J3) on dynamic magnetic critical behaviors of a mixed-spin (3/2, 2) bilayer system under an oscillating magnetic field are investigated by the Glauber-type stochastic dynamics based on the mean-field theory. For this purpose, dynamic phase diagrams are constructed in the reduced temperature and magnetic field amplitude plane for the ferromagnetic/ferromagnetic (FM/FM), antiferromagnetic/ferromagnetic (AFM/FM) and AFM/AFM interactions in detail. We observe that the influences of DA, DB and J3 interactions parameters on the behavior of the dynamic phase diagrams are very much.

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“…(see Refs. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] and references there in). Theoretically, the spin-1/2 (see Refs.…”

Section: Introductionmentioning

confidence: 99%

Influences of Crystal-Field and Interlayer Coupling Interactions on Dynamic Phase Diagrams of a Mixed-Spin (3/2,2) Bilayer System

Keskín¹,

Koçak²

2018

Commun. Theor. Phys.

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Interface structure in nanoscale multilayers near continuous-to-discontinuous regime

Pradhan

Majhi

Nayak

et al. 2016

Journal of Applied Physics

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Interfacial atomic diffusion, reaction, and formation of microstructure in nanoscale level are investigated in W/B4C multilayer (ML) system as functions of thickness in ultrathin limit. Hard x-ray reflectivity (XRR) and x-ray diffuse scattering in conjunction with x-ray absorption near edge spectroscopy (XANES) in soft x-ray and hard x-ray regimes and depth profiling x-ray photoelectron spectroscopy (XPS) have been used to precisely evaluate detailed interfacial structure by systematically varying the individual layer thickness from continuous-to-discontinuous regime. It is observed that the interfacial morphology undergoes an unexpected significant modification as the layer thickness varies from continuous-to-discontinuous regime. The interfacial atomic diffusion increases, the physical density of W layer decreases and that of B4C layer increases, and further more interestingly the in-plane correlation length decreases substantially as the layer thickness varies from continuous-to-discontinuous regime. This is corroborated using combined XRR and x-ray diffused scattering analysis. XANES and XPS results show formation of more and more tungsten compounds at the interfaces as the layer thickness decreases below the percolation threshold due to increase in the contact area between the elements. The formation of compound enhances to minimize certain degree of disorder at the interfaces in the discontinuous region that enables to maintain the periodic structure in ML. The degree of interfacial atomic diffusion, interlayer interaction, and microstructure is correlated as a function of layer thickness during early stage of film growth.

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Refurbishment of W/B₄C multilayers on Si substrate by etching a chromium buffer layer

Hou

Cui

et al. 2022

Opt. Express

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In synchrotron facilities, optics with multilayer coatings are used for beam monochromatization, focusing, and collimation. These coatings might be damaged by high heat load, poor film adhesion, high internal stress, or poor vacuum. Optical substrates always need high quality, which is expensive and has a long processing cycle. Therefore, it is desired to make the substrate reusable and the refurbished coating as good as a brand-new one. In this study, a W/B4C multilayer coating with a 2 nm Cr buffer layer was prepared on a Si substrate. The coating was successfully stripped from the Si substrate by dissolving the Cr buffer layer using an etchant. The roughness and morphology after the different etching times were investigated by measuring the GIXRR and 3D surface profiler. It is shown that the time required to etch the W/B4C multilayer coating with a Cr buffer layer, is quite different compared with etching a single Cr film. A layer of silicon dioxide was introduced during the fitting. After the new etching process, the roughness of the sample is as good as the one on a brand-new substrate. The W/B4C multilayer coatings with a Cr buffer layer were recoated on the etched samples, and the interface roughness was not damaged by the etching process.

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Investigation of defects in sputtered W/B4C multilayers

Cited by 3 publications

References 21 publications

Influences of Crystal-Field and Interlayer Coupling Interactions on Dynamic Phase Diagrams of a Mixed-Spin (3/2,2) Bilayer System

Influences of Crystal-Field and Interlayer Coupling Interactions on Dynamic Phase Diagrams of a Mixed-Spin (3/2,2) Bilayer System

Interface structure in nanoscale multilayers near continuous-to-discontinuous regime

Refurbishment of W/B₄C multilayers on Si substrate by etching a chromium buffer layer

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Investigation of defects in sputtered W/B4C multilayers

Cited by 3 publications

References 21 publications

Influences of Crystal-Field and Interlayer Coupling Interactions on Dynamic Phase Diagrams of a Mixed-Spin (3/2,2) Bilayer System

Influences of Crystal-Field and Interlayer Coupling Interactions on Dynamic Phase Diagrams of a Mixed-Spin (3/2,2) Bilayer System

Interface structure in nanoscale multilayers near continuous-to-discontinuous regime

Refurbishment of W/B4C multilayers on Si substrate by etching a chromium buffer layer

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Refurbishment of W/B₄C multilayers on Si substrate by etching a chromium buffer layer