Investigation of delta-doped quantum wells for power FET applications

Roberts, Jason; Harris, J. J.; Woods, N. J.; Hopkinson, M.

doi:10.1006/spmi.1996.0242

Cited by 4 publications

(5 citation statements)

References 6 publications

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“…They can serve as a source of free carriers in modulation-doped field effect transistors 1,2 or power devices, 3 allow one to produce low-resistivity ohmic contacts 4,5 or to obtain high-field regions for studying and applying electro-optical effects, 6,7 for example. Moreover, because the ␦ doping produces a self-consistent potential well confining a two-dimensional ͑2D͒ electron system with a high degree of disorder, basic physical properties of the two-dimensional electron gas have been studied in ␦ layers mainly by magnetotransport and optical methods [8][9][10] with a special emphasis put on a detailed analysis of the influence of disorder on the transport and the localization in twodimensional systems.…”

Section: Introductionmentioning

confidence: 99%

Deep levels in GaAs due to Si δ doping

Hubı́k

Krištofik

Mareš

et al. 2000

Journal of Applied Physics

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␦͑Si͒-doped GaAs samples grown by metalorganic vapor phase epitaxy are studied by capacitancevoltage and deep level transient spectroscopy ͑DLTS͒ techniques. A detailed analysis of the DLTS signal ͑including spatial profiles͒ is performed. DLTS spectra exhibit a clear development depending on the sheet dopant concentration ranging from 5ϫ10 14 to 2ϫ10 16 m Ϫ2 . Two observed peaks do not change its activation energy with the doping level while their amplitude increases rapidly when the doping rises. We assign them to defects generated by high silicon concentration, probably related to gallium vacancy. Another peak in the most densely doped sample seems to correspond to the DX level which is occupied near the ␦ layer. Peculiar features of the EL2 level are observed in ␦-doped GaAs and explained by the band bending due to the dopant sheet. No indication of the emission from the quantum confinement states is found in DLTS spectra taken at temperatures 80-400 K.

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Section: Introductionmentioning

confidence: 99%

Deep levels in GaAs due to Si δ doping

Hubı́k

Krištofik

Mareš

et al. 2000

Journal of Applied Physics

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“…Furthermore, we have also found that the mobility is more linear in the asymmetrical mode than in the symmetrical one and that it doubles when the contact potentials are high, allowing a better performance [19,20].…”

Section: Introductionmentioning

confidence: 59%

“…The solid curve presents the result achieved using the expression (11), and the dashed curve presents the result using the expression follow (19). The solid curve can be divided into three regions: the first in 50-250 meV, the second in 250-550 meV, and the third in 550-650 meV.…”

Section: Casementioning

confidence: 99%

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Oubram¹,

Gaggero‐Sager²,

Bassam³

et al. 2010

PIER

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Abstract-The objective of this work is to analyze electronic transport phenomena, due to ionized impurity scattering in δ-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor). In this work, we report theoretical results for electronic transport in a delta-MIGFET using the device electronic structure and analytical expression of mobility and conductivity. The results show that the analytical mobility and conductivity are a good way to analyze transport in this device. We find the relative mobility as a linear and increasing function in different modes; also, we find transconductance as an almost flat function in all the evaluated interval. Finally, we analyze the differential capacitance and resistivity, and we report regions where this device is operating in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of this device in symmetrical mode.

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“…Also, for the improvement of gate turn-on voltage, the npn depletion in the camel-like gate provides higher potential barrier height than the conventional M-S gate structure [6][7][8]. On the other hand, delta-doped field-effect transistors have been demonstrated to substantially improve the linearity of transfer characteristics due to the high two-dimensional electron gas, good carrier confinement, and ease control of threshold voltage [9][10][11]. However, the low gate potential barrier height still limits the maximum drain output current.…”

Section: Introductionmentioning

confidence: 99%