Investigation of Ruthenium Electrodes for (Ba,Sr)TiO₃ Thin Films

Abstract

A high-temperature series for the spin-glass order-parameter susceptibility is presented for n-component spins on a &dimensional hypercubic lattice. The coupling between neighbouring spins is taken to be a Gaussian random variable. The series is analysed for the cases of XY (n = 2) and Heisenberg (n = 3) spins. In each case the transition temperature falls to zero near four dimensions, indicating that there is no Edwards-Anderson order in less than four dimensions.

Ruthenium Thin Films Grown by Atomic Layer Deposition

“…[8] In addition, very thin ruthenium films can be used for separating the magnetic layers in antiferromagnetically-coupled (AFC) magnetic recording media, [9±11] and in magnetic random access memories (MRAMs). [12] Ruthenium thin films can be deposited by physical vapor deposition (PVD) techniques such as electron beam evaporation [13] and sputtering, [14,15] or by CVD. CVD is preferred in applications where high conformality of the films is needed.…”

Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures

“…The depletion problem with a conventional polycrystalline silicon gate electrode becomes severe with decreasing EOT, demanding alternative gate materials such as metals. Ru and RuO 2 are currently considered to be promising candidates, which fulfill the requirements for an alternative gate electrode: (a) both materials exhibit a low electrical resistivity of 7 lX cm and 45 lX cm [1,5] for bulk Ru and bulk RuO 2 , respectively; (b) the work function of about 5 eV for Ru and RuO 2 is suitable for PMOS applications [2]; (c) Ru is easily patterned by oxygen plasma treatment [3]; (d) Ru, with the formation of RuO x , and RuO 2 demonstrate excellent diffusion barrier properties [4,5] against copper.…”

Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films

“…The wet films showed the increase of the leakage current densities after long storage time. Since it is known that the surface roughness of film strongly affects the leakage current characteristics [11,12], it is reasonable to think that these changes in leakage current densities were resulted from the surface roughness of the hydrated films as shown in Fig. 2.…”