Investigation of the electrical properties of metal–oxide–metal structures formed from RF magnetron sputtering deposited MgTiO3 films

Huang, Cheng Liang; Wang, Sih Yin; Chen, Yuan Bin; Li, Bing Jing; Lin, Ying Hong

doi:10.1016/j.cap.2011.12.012

Cited by 13 publications

(6 citation statements)

References 7 publications

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“…This is due to the increase in thermal energy provided by the substrate temperature. This additional energy would allow the sputtered atoms to have a greater chance of migrating to the lowest energy state as the increased substrate temperature can enhance the kinetic energy and mobility of the atoms at the growing film surface [55]. The peaks correspond to β-phase of orthorhombic Ta 2 O 5 , which is well in accord with the JCPDS card.…”

Section: Effect Of Substrate Temperaturesupporting

confidence: 69%

Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature

Sahoo,

Pradhan,

Ghosh

et al. 2024

Phys. Scr.

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Dielectric thin films are important building blocks of microelectronic devices, and hence, research on the development of high-k dielectric thin films has drawn tremendous research interest. In this research, thin films of tantalum oxide (Ta2O5), a high-k dielectric material, are deposited on the Si substrate by the radio frequency (RF) magnetron sputtering technique. During the deposition of Ta2O5 thin film, the sputtering parameters such as sputtering power and substrate temperature were systematically varied, and post-deposition structural, morphological, and electrical properties of sputtered Ta2O5 films are studied by X-ray diffraction, Fourier transform infrared spectroscopy, atomic force microscope, capacitance-voltage (C-V) and current-voltage (I-V) measurement techniques. The annealed Ta2O5 thin film at the temperature of 900 °C for 1 hour possesses polycrystalline nature with β – phase orthorhombic crystal structure. The film deposited at 150 W and substrate temperature at room temperature has shown comparatively lower surface roughness, which depicts the energy, and mobility of adatoms greatly influenced by RF power and substrate temperature. With the increase in sputtering power, the oxide charge density (Qox) is found to increase. On the other hand, Qox is found to decrease with the increase in substrate temperature. The film deposited at RF power of 150 W and substrate temperature of 300 °C is found to be of high dielectric constant, low oxide and interface charge density, and lower leakage current.

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Section: Effect Of Substrate Temperaturesupporting

confidence: 69%

Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature

Sahoo,

Pradhan,

Ghosh

et al. 2024

Phys. Scr.

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show abstract

“…Thus, it is substantiated that the improvement in the MZT lms' crystallinity is accompanied by an increase in surface roughness and grain size [10]. The observed surface roughness values of the MZT lms are lower than the parent MgTiO 3 lms reported earlier [6,10,11,12]. The obtained lower RMS roughness of MZT lm is suitable for optical devices as they require smoother surfaces.…”

Section: Surface Morphology Of Mzt Thin Lmssupporting

confidence: 53%

Dielectric Properties and Impedance Spectroscopy of RF Sputtered Nanocrystalline (Mg0.95Zn0.05)TiO3 Films for Electronic Applications

Gogoi¹,

Pr²,

Ka³

et al. 2021

Preprint

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Oxide thin films attracted significant attention because of their favorable responses, especially dielectric and stable electrical properties. In this study, nanocrystalline (Mg0.95Zn0.05)TiO3 (MZT) films are deposited on Pt/TiO2/SiO2/Si and quartz substrates by radio-frequency (RF) reactive magnetron sputtering. The effect of deposition gas ratio, i.e., the proportion of oxygen and argon (O2/Ar) on broad band and microwave dielectric properties and impedance spectroscopy of MZT films are investigated. The dielectric properties showed a wide range of variation with the different O2/Ar ratios. The MZT film deposited in a pure oxygen environment showed the best dielectric properties, and the plasma survived which shows that the target is not fully oxidized. The impedance spectroscopy of the film deposited under a pure oxygen environment exhibited the single semi-circular arc. The Ag/ MZT/Pt thin films capacitors exhibited the best dielectric constant with low loss tangent. The microwave dielectric constant measured at different spot frequencies in the GHz range displayed inferior dielectric response as compared to their bulk counterparts. An equivalent circuit model to explain the Nyquist plots of MZT films are worked out. The observed electrical and dielectric characteristics of the thin films suggest interesting applications in dielectric mirror and integrated circuits.

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“…Among them, perovskite oxides have attracted a significant amount of attention owing to their simple fabrication, good stability, remarkable electron mobility, structural tenability, and chemical composition through partial substitution with aliovalent elements. Magnesium titanate (MTO), as a perovskite material, has good physical and electrical properties, including a moderate dielectric constant, low dielectric loss, and high temperature stability, and is commonly used in microwave dielectrics [ 10 , 11 , 12 ]. Zirconium dioxide (ZrO 2 ) has three main polymorphs (monoclinic, tetragonal, and cubic), used for electrochemical gas sensing at high operating temperatures [ 13 , 14 , 15 , 16 ].…”

Section: Introductionmentioning

confidence: 99%

Magnesium Zirconate Titanate Thin Films Used as an NO2 Sensing Layer for Gas Sensor Applications Developed Using a Sol–Gel Method

Huang

Lee

Wang

2021

Sensors

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Magnesium zirconate titanate (MZT) thin films, used as a sensing layer on Al interdigitated electrodes prepared using a sol–gel spin-coating method, are demonstrated in this study. The p-type MZT/Al/SiO2/Si structure for sensing NO2 is also discussed. The results indicated that the best sensitivity of the gas sensor occurred when it was operating at a temperature ranging from 100 to 150 °C. The detection limit of the sensor was as low as 250 ppb. The sensitivity of the MZT thin film was 8.64% and 34.22% for 0.25 ppm and 5 ppm of NO2 gas molecules at a working temperature of 150 °C, respectively. The gas sensor also exhibited high repeatability and selectivity for NO2. The response values to 250, 500, 1000, 1500, 2000, 2500, and 5000 ppb NO2 at 150 °C were 8.64, 9.52, 12, 16.63, 20.3, 23, and 34.22%, respectively. Additionally, we observed a high sensing linearity in NO2 gas molecules. These results indicate that MZT-based materials have potential applications for use as gas sensors.

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Investigation of the electrical properties of metal–oxide–metal structures formed from RF magnetron sputtering deposited MgTiO3 films

Cited by 13 publications

References 7 publications

Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature

Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature

Dielectric Properties and Impedance Spectroscopy of RF Sputtered Nanocrystalline (Mg0.95Zn0.05)TiO3 Films for Electronic Applications

Magnesium Zirconate Titanate Thin Films Used as an NO2 Sensing Layer for Gas Sensor Applications Developed Using a Sol–Gel Method

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Investigation of the electrical properties of metal–oxide–metal structures formed from RF magnetron sputtering deposited MgTiO3 films

Cited by 13 publications

References 7 publications

Modulation of electrical properties of sputtered Ta2O5 films by variation of RF power and substrate temperature

Modulation of electrical properties of sputtered Ta2O5 films by variation of RF power and substrate temperature

Dielectric Properties and Impedance Spectroscopy of RF Sputtered Nanocrystalline (Mg0.95Zn0.05)TiO3 Films for Electronic Applications

Magnesium Zirconate Titanate Thin Films Used as an NO2 Sensing Layer for Gas Sensor Applications Developed Using a Sol–Gel Method

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Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature

Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature