Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate

Hayashi, T.; Ueno, Keiji; Saiki, Koichiro; Koma, Atsushi

doi:10.1016/s0022-0248(00)00627-8

Cited by 27 publications

(23 citation statements)

References 17 publications

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“…Research works have demonstrated and predicted that TMD field‐effect transistors show high on/off current ratio (10 4 ≈ 10 8 ) with less short‐channel effects. Considering InSe–MoS 2 heterostructure has been grown by molecular beam epitaxy, the band engineering in InSe–MoS 2 vdW heterostructure is worth studying.…”

contrasting

confidence: 45%

Controllable Band Alignment Transition in InSe–MoS₂ Van der Waals Heterostructure

Chen

Lin

2018

Physica Rapid Research Ltrs

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Van der Waals (vdW) heterojunctions with type‐II band alignment, in which electrons and holes are localized in distinct layers, play a central role in optoelectronic devices and solar cells. The present study analyzes a type‐I→II band alignment transition in InSe–MoS2 vdW heterostructure, proposed to be controlled via changing interlayer distance or applying perpendicular external electric field. The band position shift of InSe relative to that of MoS2 attributes to a surface polarization mechanism. Changing band offset into type II facilitates possible use and allows greater flexibility for band engineering of InSe–MoS2 heterostructure in optoelectronic and solar energy applications. The present findings provide theoretical guidance to a new approach to improve the optoelectronic properties of vdW heterostructures.

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confidence: 45%

Controllable Band Alignment Transition in InSe–MoS₂ Van der Waals Heterostructure

Chen

Lin

2018

Physica Rapid Research Ltrs

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“…The performance of group‐III monochalcogenide based transistors under ambient conditions was found to be unsatisfactory due to the degradation in the air environment . Intrinsic defects, such as vacancies and interstitials, in group‐III monochalcogenide bulks have been commonly observed in the experiment . Thus the defects could be reserved in group‐III monochalcogenide monolayers, which are obtained using mechanical exfoliation from their bulk phases.…”

Section: Effect Of Defects On the Oxidation Behaviors Of 2d Metal Chamentioning

confidence: 99%

Oxidation Behaviors of Two‐dimensional Metal Chalcogenides

Guo

Zhao

2020

ChemNanoMat

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Considering a variety of two‐dimensional (2D) materials, metal chalcogenide monolayers, including transition metal dichalcogenides, group‐IV and group‐III monochalcogenides, and copper sulfide, are outstanding in the field of microelectronics and optoelectronics. Devices constructed of these 2D materials could be sensitively affected by ambient gases, such as O2 molecules. Regarding this significant issue, here we review the oxidation behaviors of 2D metal chalcogenides, especially for perfect and defective monolayers. Perfect monolayer metal chalcogenides are resistant to oxidation, resulting from the large activation energies for chemisorption and dissociation of O2 molecules during the reaction process. However, the defective monolayers with vacancies are prone to be oxidized with small activation energies. Interestingly, oxygen atoms can fill into the chalcogen vacancy sites and further maintian the electronic band structures of the perfect systems – the band gaps and the carrier effective masses are only moderately modified by the oxygen atoms. These fundamental understandings help to improve the use of monolayer metal chalcogenides toward the development of novel 2D devices with high stability and excellent performance.

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“…These include evaporation techniques, such as flash evaporation and molecular beam epitaxy (MBE) [9,10], electrochemical synthesis [11], and metal organic chemical vapor deposition (MOCVD) [12]. Of these, MOCVD, which provides single in-line process without interruption for optoelectronic devices fabrication, independent control of VI/III ratio and easy for mass production, is the most advantageous method for thin film growth of IS for applications.…”

Section: Introductionmentioning

confidence: 99%

The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer

Chang

Lahn

Xie

et al. 2007

Journal of Crystal Growth

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Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate

Cited by 27 publications

References 17 publications

Controllable Band Alignment Transition in InSe–MoS₂ Van der Waals Heterostructure

Controllable Band Alignment Transition in InSe–MoS₂ Van der Waals Heterostructure

Oxidation Behaviors of Two‐dimensional Metal Chalcogenides

The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer

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Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate

Cited by 27 publications

References 17 publications

Controllable Band Alignment Transition in InSe–MoS2 Van der Waals Heterostructure

Controllable Band Alignment Transition in InSe–MoS2 Van der Waals Heterostructure

Oxidation Behaviors of Two‐dimensional Metal Chalcogenides

The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer

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Controllable Band Alignment Transition in InSe–MoS₂ Van der Waals Heterostructure

Controllable Band Alignment Transition in InSe–MoS₂ Van der Waals Heterostructure