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We fabricated SiGe/Si free-standing micro-objects on a silicon-on-insulator (SOI) substrate using the SiO2 sacrificial layer. SiGe/Si strained films were grown by molecular beam epitaxy on SOI substrates. The films were released from the substrate by selective etching of the SiO2 layer. The released films rolled up due to the elastic strain in the SiGe layer. Microtubes and microspirals with a diameter of about 40 μm were obtained.

The author reported stress analysis of infinite amsotropic plate with a hole at CCM-3 1986 [1]. The present report deals with rectangular anistropic plate with a circu lar hole under uniaxial loading on the basis of theory of anisotropic plane elasticity [2] Series of circular hole stress function are used, which unknown coefficients are deter mined by Least Square Method with rectangular boundary integration Stress distribution of isotropic plate, cross-ply and angle-ply laminates, which aspect ratio is 2 and ratio of hole radius to the half width is 0 5, are shown by the analysis, test and FEM with good coincidence Stress concentration factor around hole is also presented for variation of the above parameters.

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