Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study

LDC–CNTFET: A carbon nanotube field effect transistor with linear doping profile channel

“…It is clearly seen from the figure that the additional drain voltage is not absorbed on the source side of LDC-CNTFET structure. In other words, the p-doped region is screened from drain potential variations [25]. When the p-doped region is distributed linearly along the channel utilizing the LDC-CNTFET structure, the drain voltage has smaller effects on the channel region and screening the channel region at source side is more noticeable than SH-CNTFET structure.…”

A Study of SCEs and Analog FOMs in GS-DG-MOSFET with Lateral Asymmetric Channel Doping

“…halo or pocket implants. Single halo MOSFET structures have been introduced for bulk as well as for SOI MOSFETs [16][17][18] to adjust the threshold voltage and to improve the device SCEs.…”

Effect of gate engineering in double-gate MOSFETs for analog/RF applications

“…However, for channel lengths below 100 nm, DG MOSFETs shows considerable SCEs. To overcome this, channel-engineering technique employs a single halo or lateral asymmetric channel is used, which shows a considerable reduction of SCEs [7]. On the other hand, a DM-DG SOI MOSFETs proposed by Reddy et al [8] employs gate-material engineering to reduce SCEs as compared with the DG SOI MOSFET.…”