(Invited) Strain Engineering for Fully-Depleted SOI Devices

Khakifirooz, A.; Kulkarni, P.; Bedell, Stephen W.; Cheng, Kangguo; Sadana, D. K.; Doris, B.; Shahidi, G.

doi:10.1149/1.3487579

Cited by 3 publications

(1 citation statement)

References 26 publications

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“…A similar argument holds for FinFETs. Besides using Si 3 N 4 tensile strained overlayers to introduce tensile channel strain, clever process integration using bi-axially strained SOI (SSOI) substrates, relaxing strain in one direction, the bi-axial tensile strain can be converted into uni-axial tensile strain in the channel (current flow) direction (21).…”

Section: Methodsmentioning

confidence: 99%

(Invited) Selective Epitaxial Growth (SEG) of Highly Doped Si:P on Source/Drain Areas of NMOS Devices Using Si₃H₈/PH₃/Cl₂ Chemistry

Thomas

2010

ECS Trans.

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In this paper we demonstrate the successful integration of in-situ doped Si:P epitaxially grown into the source/drain areas of nMOS devices using a novel Cyclic Deposition Etch (CDE) process employing a Si 3 H 8 /PH 3 /Cl 2 based chemistry. A distinctive feature of this process is that it allows for high in-situ P doping for ease of integration within a CMOS platform. We report on material characterization results of the Si:P selective epitaxial growth (SEG). An optimized Si:P SEG process with a SEG rate of ~25 nm/min enables a 80-170s short deposition for typical epitaxial layers (35-70 nm), well suitable for high volume manufacturing (HVM). By integrating an isothermal in-situ removal of Si 0.65 Ge 0.35 (protecting/covering the NMOS areas) with a high etch rate selectivity against the underlying thin SOI at process temperature allows to eliminate the in-situ H 2 prebake and the cool-down to process temperature, significantly reducing recipe overhead and the need for a separated, dedicated pre-clean module.

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Section: Methodsmentioning

confidence: 99%

(Invited) Selective Epitaxial Growth (SEG) of Highly Doped Si:P on Source/Drain Areas of NMOS Devices Using Si₃H₈/PH₃/Cl₂ Chemistry

Thomas

2010

ECS Trans.

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A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

Morin¹,

Maîtrejean²,

Allibert³

et al. 2016

Solid-State Electronics

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Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Kim

Byeon

Jang

et al. 2014

Applied Physics Letters

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This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1−xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

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(Invited) Strain Engineering for Fully-Depleted SOI Devices

Cited by 3 publications

References 26 publications

(Invited) Selective Epitaxial Growth (SEG) of Highly Doped Si:P on Source/Drain Areas of NMOS Devices Using Si₃H₈/PH₃/Cl₂ Chemistry

(Invited) Selective Epitaxial Growth (SEG) of Highly Doped Si:P on Source/Drain Areas of NMOS Devices Using Si₃H₈/PH₃/Cl₂ Chemistry

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

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(Invited) Strain Engineering for Fully-Depleted SOI Devices

Cited by 3 publications

References 26 publications

(Invited) Selective Epitaxial Growth (SEG) of Highly Doped Si:P on Source/Drain Areas of NMOS Devices Using Si3H8/PH3/Cl2 Chemistry

(Invited) Selective Epitaxial Growth (SEG) of Highly Doped Si:P on Source/Drain Areas of NMOS Devices Using Si3H8/PH3/Cl2 Chemistry

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Contact Info

Product

Resources

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(Invited) Selective Epitaxial Growth (SEG) of Highly Doped Si:P on Source/Drain Areas of NMOS Devices Using Si₃H₈/PH₃/Cl₂ Chemistry

(Invited) Selective Epitaxial Growth (SEG) of Highly Doped Si:P on Source/Drain Areas of NMOS Devices Using Si₃H₈/PH₃/Cl₂ Chemistry