Ion beam crystallography of silicon surfaces

Tromp, R. M.; Smeenk, R.G.; Saris, F. W.

doi:10.1016/0039-6028(81)90120-5

Cited by 37 publications

(4 citation statements)

References 27 publications

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“…hydrogen adsorption does not lead to the breaking If it is assumed that the adsorption of H leads of dimer bonds (at least not at the partial presto the breaking of the total dimer bond, the above sures of atomic hydrogen considered in this paper), basic adsorption enthalpy of -338 kJ mol 1 has only the ir-bond will be broken. This is consistent to be reduced with the total reconstruction energy with the results of several recent surface studies plus hSISlH; the hS~s~H term arises because the [41][42][43][44][45].Even when the Si(001)-(2 x 1) surface is subjected to high amounts of atomic hydrogen, cess d would always be 184 kJ mol 1 (i.e. the total not all of the surface dimers are broken [46].…”

Section: Single-bound Speciessupporting

confidence: 84%

A theoretical study of adsorption equilibria in silicon CVD

Gardeniers

Giling

Jong

et al. 1990

Journal of Crystal Growth

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As part of a theoretical study of adsorption processes in the chemical vapour deposition of silicon, thermochemical data are derived for the adsorption of Si-H species on the Si(111) and the dimer-reconstructed Si(001)-(2 xl) surfaces. Essential contributions to the heats of adsorption appear to be electron pairing and two-and three-body interactions. It is shown that when the bond energies are defined in this way, also a consistent description of the bonds in silicon hydrides is provided. This demonstrates that with reasonable confidence the method can be applied to the adsorption process itself. Data are derived for species which may form one, two or even four bonds with the surface. It is assumed that on the (111) surface adsorbates bind on the "dangling bonds" which are present on this surface in a broken bond model. It is demonstrated that on the dimer reconstructed Si(001)-(2 xl) surface, adsorbates will either bind on the surface atoms with one or two bonds, without the breaking of the dimer bonds, or, if the species have the possibility to form two or four bonds with the surface atoms, may become inserted into the dimer bonds. With the aid of the derived thermochemical data for adsorption and the Langmuir isotherm or modifications thereof, the coverage of the Si(111) and the dimer reconstructed Si(001)-(2X1) surfaces with species from the Si-H system is calculated. It is found that the equilibrium surface coverages of the Si(111) and the Si(001)-(2 xl) surfaces are very similar: the hydrogen coverage is high at all temperatures, while at low supersaturation the coverage with growth species is very low on both surfaces.

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Section: Single-bound Speciessupporting

confidence: 84%

A theoretical study of adsorption equilibria in silicon CVD

Gardeniers

Giling

Jong

et al. 1990

Journal of Crystal Growth

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“…Here, depending on the surface preparation technique, superstructures of longer range (2xn) with 6<n<10 have been also obtained (Martin et al, 1986). Previous studies suggest the (2xn) phases to be a 'missing dimer' (MD) structure either stable (Pandey, 1985;D. Rohlfmgetal., tobepublished)ormetastable(Martinetul., 1986), or aMD structure stabilized by surface strain (Aruga & Maruta, 1986) and/or possibly impurities (McRae et al, 1985).…”

Section: Introductionmentioning

confidence: 93%

“…Structure analysis of Si(OO1) has been performed in the past with many different experimental techniques, including low energy electron diffraction (LEED) (Yang etul., 1982;Northrup, 1985), ion scattering (Tromp et al, 1983) and scanning tunnelling microscopy (STM) (Hamers et al, 1986). There seems to be general agreement on the atomic arrangement of the commonly found clean Si(001)-(2x 1) surface, i.e.…”

Section: Introductionmentioning

confidence: 99%

A real space investigation of the dimer defect structure of Si(001)‐(2times8)

Niehus

Köhler

Copel³

et al. 1988

Journal of Microscopy

123

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KEY WORDS. Real space imaging, Si(001)-(2x8). SUMMARY The atomic arrangement of the Si(001)-(2 x 8) surface has been directly imaged in real space by scanning tunnelling microscopy. The superstructure is impurity induced and stablilized by as little as 1% Ni. Clean Si(OO1) surfaces do not form the (2x8) phase. The two-dimensional Fourier transforms of the STM topographs correspond well to the (2x8) LEED pattern, but the real space images are in fact considerably more complex than previously concluded on the basis of recent diffraction technique measurements. The STM images clearly demonstrate that the (2x8) surface consists of a complex missing dimer structure, namely one and multiple dimer vacancies. Such a dimer defect appears related to the Ni impurity and intimately related to the ordering of the dimer defects probably by third layer dimerization to produce quasiordered 'channels'.

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“…Our work has largely been performed using Medium Energy Ion Scattering (MEIS), a very powerful but not widely available tool for the study of surface and thin film structure and composition. [12][13][14][15][16] Using sequential adsorption of isotopes, we show that the growth of ultrathin oxide films is very different from that for thicker films and involves reactions in two distinct spatial regions. We present results that pertain to the mechanism for the reactions that occur both at the surface and near the interface.…”

Section: Introductionmentioning

confidence: 99%

Medium Energy Ion Scattering Studies of Silicon Oxidation and Oxynitridation

Garfunkel

Gusev

et al. 1998

Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices

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The paper reviews some of our recent high resolution medium energy ion scattering (MEIS) experiments on mechanistic and structural aspects of ultrathin «5 nm) dielectric films (oxides, SiO z ' and oxynitrides, SiOxN) thermally grown on silicon surfaces. The growth mechanism of ultrathin films°using isotopic (,60/"OZ) labeling methods, the transition region near the oxide/substrate interface, and silicon oxynitridation in N20 and NO are discussed.

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Ion beam crystallography of silicon surfaces

Cited by 37 publications

References 27 publications

A theoretical study of adsorption equilibria in silicon CVD

A theoretical study of adsorption equilibria in silicon CVD

A real space investigation of the dimer defect structure of Si(001)‐(2times8)

Medium Energy Ion Scattering Studies of Silicon Oxidation and Oxynitridation

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