Ion-beam deposition with positive and negative ions

Fujii, K.; Horino, Y.; Tsubouchi, Nobuteru; Enders, B.; Chayahara, Akiyoshi; Kinomura, A.

doi:10.1016/s0257-8972(95)02841-2

Cited by 2 publications

(1 citation statement)

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“…Incorporation of dopants into the film can be performed by application of mosaic, alloic or powder targets [1,2,3]. Although, the newest apparatus for magnetron sputtering is equipped in multi-targets system and it enables the precise doping control [4,5]. Selective change of the films composition can be received by change of supply parameters for each magnetron during the entire process [6].…”

Section: Introductionmentioning

confidence: 99%

Magnetron sputtering system with multi-targets for multilayers deposition

Adamiak

Dora²,

Kaczmarek

et al. 2009

2009 International Students and Young Scientists Workshop "Photonics and Microsystems"

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In this paper new magnetron sputtering system for multilayers deposition has been presented. The system allows sputtering of different materials from 4 targets in low pressure of working and reactive gas (oxygen, argon, oxygen + argon). Manufactured structures can be build from films, which have gradient concentration of dopant.Also the doping process can be performed with high precision in continuous or in pulse way. The high doping precision and possibility of deposition of multilayers without interruption of the sputtering process was received after application of a special designed magnetron pulse supplies.Thanks of that the system allows on manufacturing of the multilayers, which connect properties of different single films (dielectric, semiconducting and conducting) in one structure.

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