2014
DOI: 10.1016/j.microrel.2014.07.002
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Junction temperature management of IGBT module in power electronic converters

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Cited by 24 publications
(11 citation statements)
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“…Lifetime analysis for power electronic devices can be evaluated by using Weibull statistics [34]. Devices under test are examined for determining the number of cycles to failure [35].…”
Section: Lifetime Comparison Analysismentioning
confidence: 99%
“…Lifetime analysis for power electronic devices can be evaluated by using Weibull statistics [34]. Devices under test are examined for determining the number of cycles to failure [35].…”
Section: Lifetime Comparison Analysismentioning
confidence: 99%
“…Previous work on the active thermal control of VSCs modules has focused essentially on the control of the switching frequency [7]- [9] as a means to reduce the temperature of the semiconductors. However this approach is unsuited for MMC applications as they operate at a very low switching frequency [10], in the order of a few hundred Hertz, with little room for further reduction.…”
Section: Proposed Controllermentioning
confidence: 99%
“…Hence the temperature profile of IGBT is one of the critical parameters for researching the reliability of power semiconductors devices [3]. In order to improve the reliability of the power converters, thermal shock strength should be reduced, and thermal management is an effective method [5].…”
Section: Introductionmentioning
confidence: 99%
“…The temperature profiles of IGBT can be managed by the heat sink design and adjustment of electrical parameters [5]. The heat sink design can reduce the thermal stress of IGBT, as well as the thermal damage.…”
Section: Introductionmentioning
confidence: 99%
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