2013
DOI: 10.1364/oe.21.022098
|View full text |Cite
|
Sign up to set email alerts
|

Kilometer-range depth imaging at 1550 nm wavelength using an InGaAs/InP single-photon avalanche diode detector

Abstract: We have used an InGaAs/InP single-photon avalanche diode detector module in conjunction with a time-of-flight depth imager operating at a wavelength of 1550 nm, to acquire centimeter resolution depth images of low signature objects at stand-off distances of up to one kilometer. The scenes of interest were scanned by the transceiver system using pulsed laser illumination with an average optical power of less than 600 µW and per-pixel acquisition times of between 0.5 ms and 20 ms. The fiber-pigtailed InGaAs/InP … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
106
0

Year Published

2015
2015
2023
2023

Publication Types

Select...
4
3
3

Relationship

2
8

Authors

Journals

citations
Cited by 199 publications
(106 citation statements)
references
References 39 publications
0
106
0
Order By: Relevance
“…The image was acquired in May 2016 in Virginia, USA, using a time-of-flight scanning sensor, based on the TCSPC technique. The transceiver system and data acquisition hardware used for this work are broadly similar to that described in [20,21], which uses a 1550nm wavelength and an electrically gated InGaAs/InP single photon avalanche diode (SPAD) detector (see also [14] for more details regarding the system parameters). The image was acquired using a per pixel acquisition time equal to 3.2ms, corresponding to a total acquisition time of ≈ 10s for the considered number of pixels.…”
Section: Results On Real Datamentioning
confidence: 99%
“…The image was acquired in May 2016 in Virginia, USA, using a time-of-flight scanning sensor, based on the TCSPC technique. The transceiver system and data acquisition hardware used for this work are broadly similar to that described in [20,21], which uses a 1550nm wavelength and an electrically gated InGaAs/InP single photon avalanche diode (SPAD) detector (see also [14] for more details regarding the system parameters). The image was acquired using a per pixel acquisition time equal to 3.2ms, corresponding to a total acquisition time of ≈ 10s for the considered number of pixels.…”
Section: Results On Real Datamentioning
confidence: 99%
“…In recent years, single-photon timing has emerged as a candidate technology for high-resolution three-dimensional profiling [1], and the performance of the approach has been demonstrated in a number of field trials [2]- [4]. Timecorrelated single-photon counting (TCSPC) is a statistical sampling technique which records the arrival time of detected photons with respect to the emitted laser pulse or absolute time.…”
Section: Introductionmentioning
confidence: 99%
“…Although 3D imaging systems have been studied, they are usually realized either as single pixel detectors [1][2][3][4] or as bench-top systems with simple detector arrays [5][6][7]. Silicon nanophotonic processes use similar steps as their electronic counterparts, leading to higher yields, and compatibility with electronic integrated circuits.…”
Section: Introductionmentioning
confidence: 99%