L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations

Takenaka, I.; Ishikura, K.; Takahashi, H.; Asano, Kōichi; Morikawa, Junko; Satou, Katsumi; Kishi, K.; Hasegawa, Kouichi; Tokunaga, Kenichi; Emori, F.; Kuzuhara, Masaaki

doi:10.1109/4.782074

Cited by 13 publications

(3 citation statements)

References 5 publications

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“…III-V heterojunction field effect transistors (HFETs) have attracted considerable attention for microwave power and digital circuit applications due to the high speed and high current handling capability [1][2][3]. For signal amplifier applications, it is important for HFETs to require board gate swing and voltage-independent transconductance.…”

Section: Introductionmentioning

confidence: 99%

Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages

Tsai

Weng

Zhu

2008

Superlattices and Microstructures

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Section: Introductionmentioning

confidence: 99%

Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages

Tsai

Weng

Zhu

2008

Superlattices and Microstructures

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“…Heterostructure field effect transistors (HFETs) exhibiting high output current and board gate voltage swing are especially essential for large signal and linear amplification in circuit applications [1][2][3]. Among the HFETs, although high electron mobility transistors (HEMTs) could provide relatively high transconductance due to the high carrier mobility, they suffered from poor device linearity and low output current [4,5].…”

Section: Introductionmentioning

confidence: 99%

InGaP/GaAs/InGaAs doped-channel field-effect transistor using camel-like gate structure

Tsai

Guo

Lee

et al. 2010

2010 International Conference on Microwave and Millimeter Wave Technology

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In this article, we first fabricate and demonstrate the InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic heavy-doped channel. Due to the large gate potential barrier for the use of the n + -GaAs/p + -InGaP/nGaAs camel-like gate and the thin as well as heavy doping n + -InGaAs channel layer, the effective conduction band discontinuity ('Ec) is substantially extended and a high gate turn-on voltage up to 2.0 V is obtained. The device exhibits a relatively broad gate voltage swing resulting from the high gate turn-on voltage. In addition, a maximum drain current of 393 mA/mm and a maximum transconductance of 96 mS/mm are measured. These results indicate that the studied device is suitable for signal amplifier and linear circuit applications.

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“…Introduction: Recently, heterostructure field effect transistors (HFETs) have been widely applied in signal amplifiers and digital integrated circuits [1,2]. Among the HFETs, the transconductance of high electron mobility transistors (HEMTs) may be relatively high resulting from the formed two-dimensional electron gas (2DEG) in the modulated channel; however, the magnitude of forward gate bias is severely limited owing to the so-called parallel conduction problem [3].…”

mentioning

confidence: 99%

Gate voltage swing enhancement of InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels

et al. 2010

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Direct current characteristics of an InGaP/InGaAs pseudomorphic HFET employing low-to-high double doping channels are first demonstrated and compared with the conventional single doping-channel device. Because the lower InGaAs channel is heavily doped and two-dimensional electron gas is formed in this channel, the threshold voltage is extended to 23.7 V. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing up to 4.5 V is achieved in the studied device, which is greater than that of 3.85 V in the single doping-channel device.Introduction: Recently, heterostructure field effect transistors (HFETs) have been widely applied in signal amplifiers and digital integrated circuits [1, 2]. Among the HFETs, the transconductance of high electron mobility transistors (HEMTs) may be relatively high resulting from the formed two-dimensional electron gas (2DEG) in the modulated channel; however, the magnitude of forward gate bias is severely limited owing to the so-called parallel conduction problem [3]. This will degrade the current driving capability and device linearity. But, transistor performance with high output current and device linearity is essential for linear amplification in circuit applications. A variable HFET, i.e. doping-channel FET (DCFET), has been demonstrated to exhibit broad gate voltage swing for improving device linearity and reducing the higher order harmonic terms in linear amplifier applications [4,5]. The basic structure of DCFETs consists of a narrow bandgap doped material as the channel layer to enhance carrier conduction and a wide bandgap undoped (or low-doping) barrier layer as an 'insulator' to improve the gate Schottky characteristic.In this Letter, owing to the lower channel with heavy doping concentration and the formation of 2DEG in this channel, the magnitude of the threshold voltage is extended and the gate voltage swing is effectively improved by the employment of a low-to-high doping channel profile in the InGaP/InGaAs pseudomorphic HFET.

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L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations

Cited by 13 publications

References 5 publications

Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages

Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages

InGaP/GaAs/InGaAs doped-channel field-effect transistor using camel-like gate structure

Gate voltage swing enhancement of InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels

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