Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets

Jo, Hyeon-Bhin; Lee, I.-G.; Baek, Ji-Min; Lee, S T.; Choi, Sumin; Kim, H.-J.; Jeong, Hyeon-Seok; Park, W.-S.; Yoo, Ji-Hoon; Lee, H.-Y.; Yun, Dongyoung; Son, SW.; Ko, Dae-Hong; Kim, T.-W.; Kwon, Hyuk-Min; Kim, S K.; Kim, J. G.; Yun, J.; Kim, T.; Lee, J H.; Lee, J.-H.; Shin, Chan-Soo; Seo, K. -S.; Kim, D. -H.

doi:10.1109/vlsitechnologyandcir46769.2022.9830243

Cited by 3 publications

(1 citation statement)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Gate-all-around silicon nanosheet FET (NSFET) has been introduced as a replacement of FinFET [2][3][4][5][6][7]. It enables CMOS technology node scaling at 3 nm and beyond due to its excellent electrostatics and short channel immunity [8][9][10][11][12]. NSFETs with flexible design and large integration density have attracted enormous attention.…”

Section: Introductionmentioning

confidence: 99%

The study of electron mobility on ultra-scaled silicon nanosheet FET

Liu,

Rezaei,

Yang

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

The nanosheet FET (NSFET) is the successor to FinFET, and its mobility significantly affects device performance. In this paper, we investigate the impact of phonon (ph) and surface roughness (SR) scattering on the electron mobility of n-type silicon NSFETs. The effects of channel width, thickness, and doping concentrations on NSFETs' mobility are also analyzed. Non-Equilibrium Green’s Function (NEGF) solver which incorporates scattering mechanisms using the self-energy formulation is employed. The mobility behavior in NSFETs is strongly affected by ph scattering and SR scattering. As for ultrathin nanosheets, severe mobility degradation is dominated by SR scattering. The mobility is slightly affected by the doping concentrations. Simulation results provide guidance to researchers and industry in understanding and predicting the variation of mobility under the trend of continuous scaling.

show abstract

Section: Introductionmentioning

confidence: 99%

The study of electron mobility on ultra-scaled silicon nanosheet FET

Liu,

Rezaei,

Yang

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

show abstract

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

View full text Add to dashboard Cite

This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures. This article provides a concise yet insightful overview of the development of FinFET, exploring modified architectures, current trends, and associated constraints. The growing importance of other semiconductor materials instead of Si in FinFET or other technologies has been studied in detail. The article explores an emerging technology called 'GAA MBCFET', highlighting its advantages over FinFET. It also delves into the notable drawbacks and complex fabrication challenges associated with the upcoming GAA MBCFET technology. INDEX TERMS Gate-All-Around (GAA), Multi-Bridge Channel (MBC), Silicon on Insulator (SOI)

show abstract

Effects of Al₂O₃ Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties

Ko,

Ahn,

Suh

et al. 2023

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

L_g = 130 nm GAA MBCFETs with three-level stacked In_0.53Ga_0.47As nanosheets

Cited by 3 publications

References 5 publications

The study of electron mobility on ultra-scaled silicon nanosheet FET

The study of electron mobility on ultra-scaled silicon nanosheet FET

FinFET to GAA MBCFET: A Review and Insights

Effects of Al₂O₃ Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties

Contact Info

Product

Resources

About

Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets

Cited by 3 publications

References 5 publications

The study of electron mobility on ultra-scaled silicon nanosheet FET

The study of electron mobility on ultra-scaled silicon nanosheet FET

FinFET to GAA MBCFET: A Review and Insights

Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties

Contact Info

Product

Resources

About

L_g = 130 nm GAA MBCFETs with three-level stacked In_0.53Ga_0.47As nanosheets

Effects of Al₂O₃ Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties