2006 IEEE MTT-S International Microwave Symposium Digest 2006
DOI: 10.1109/mwsym.2006.249699
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Large-Signal Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding

Abstract: We report on a consistent large-signal and small-signal modeling and parameter extraction method for high-speed InP DHBT valid to 110 GHz. Electromagnetic simulation is applied to predict the embedded network model caused by pad parasitics. Applying direct parameter extraction on the de-embedded device response leads to accurate small-signal model description of the InP DHBT. We have solved the problem of consistent transit time modeling by a two step process. A parameter extraction approach is described for t… Show more

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Cited by 14 publications
(11 citation statements)
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References 6 publications
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“…Because intrinsic base resistances are always considered as weak bias-dependent parameters, 23 we extract them under cutoff conditions as initial normal-bias resistances. Omitting the two small verification capacitances C bev and C cev , resistances can be calculated by (17) and (18). This simplification should be made at low frequency, because the shunt capacitance will bring errors at high frequency.…”
Section: Intrinsic Elements Initializationmentioning
confidence: 99%
See 1 more Smart Citation
“…Because intrinsic base resistances are always considered as weak bias-dependent parameters, 23 we extract them under cutoff conditions as initial normal-bias resistances. Omitting the two small verification capacitances C bev and C cev , resistances can be calculated by (17) and (18). This simplification should be made at low frequency, because the shunt capacitance will bring errors at high frequency.…”
Section: Intrinsic Elements Initializationmentioning
confidence: 99%
“…It is necessary to improve the high-frequency small-signal equivalent-circuit model for these applications. Up to now, many incremental works have been reported such as extrinsic parameter equivalent-circuit topology improvements, [15][16][17] high-frequency measurement and de-embedding methods, [18][19][20] parameter extraction method improvements of millimeter-wave transistors, [15][16][17][21][22][23][24][25] substrate and parasitic transistor parasitics extraction (for SiGe devices), 22 improvements of special biases (cold, cutoff, open-collector, and overdriven I b biases) parasitics extraction methods, and consideration of de-embedding residual parameters. 15,23 Furthermore, compared with planar HBTs, THz InP-based triple-mesa HBTs/DHBTs are different in material, device construction, and size.…”
Section: Introductionmentioning
confidence: 99%
“…Carbon-doped 28 nm graded Base and a 5x10 16 cm -3 doped 130-250 nm composite Collector. As the major contribution to F T is the transit time in both Base and Collector, optimization has focused on the basecollector junction; we need to balance short transit time with breakdown voltage [which is a specific advantage of DHBTs], Kirk effect/blocking effect due to conduction band discontinuity and inter-valley scattering ( Figure 7).…”
Section: B Structure Optimizationmentioning
confidence: 99%
“…Based on the methodology described in [16][17][18], parameters for an UCSDlike model were extracted from various bias small-signal measurements. Figure 9 illustrates the model accuracy, for both small-signal and C BC modulation.…”
Section: Modelingmentioning
confidence: 99%
“…[13][14][15][16] In 2006, they presented a high-speed InP double-heterojunction bipolar transistor (DHBT) large-signal model and the parameter extraction method up to 110 GHz. 13 In this paper, 3D electromagnetic (EM) simulation is applied for the prediction and de-embedding of the parasitic networks induced by pads and outgoing structures. Pad parasitic effects are clearly modeled with equivalent circuit and are shown in Figure 1.…”
Section: Introductionmentioning
confidence: 99%