Laser-action in V-groove-shaped InGaAs-InP single quantum wires

Piester, D.; Bönsch, P.; Schrimpf, T.; Wehmann, H.-H.; Schlachetzki, A.

doi:10.1109/2944.865107

Cited by 33 publications

(6 citation statements)

References 24 publications

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“…Indeed all quantum wire lasers so far reported are either multiple-wire lasers [5,6,7,8,9,10], which have many quantum wires in the active region, or they are wide single-wire lasers which lase only in their excitedsubband states [11,12,13]. The excited-state lasing is typically characterized by a lasing energy above the energy of ground-state spontaneous emission at low pump levels.…”

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confidence: 99%

Lasing from a single-quantum wire

Hayamizu

Yoshita

Watanabe

et al. 2002

Applied Physics Letters

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A laser with an active volume consisting of only a single quantum wire in the 1-dimensional (1-D) ground state is demonstrated. The single wire is formed quantum-mechanically at the T-intersection of a 14 nm Al0.07Ga0.93As quantum well and a 6 nm GaAs quantum well, and is embedded in a 1-D single-mode optical waveguide. We observe single-mode lasing from the quantum wire ground state by optical pumping. The laser operates from 5 to 60 K, and has a low threshold pumping power of 5 mW at 5 K. PACS numbers: (78.67.Lt, 78.45.+h, 73.21.Hb, 42.55.Px.) A quantum wire laser is a novel semiconductor laser based on a 1-dimensional (1-D) active region such that the electron and hole carriers are allowed to move only in that one direction. In contrast, more familiar semiconductor lasers are 3-D double-hetero-structure lasers and 2-D quantum well lasers. Because the 1-D density of states (DOS) becomes more enhanced at the bottom of its band edge than the 2-D or 3-D DOS, a quantum wire laser is expected to show improvement in lasing performance [1, 2, 3, 4].However, fabrication of a single quantum wire that lases from the lowest quantum state of the wire is difficult. Indeed all quantum wire lasers so far reported are either multiple-wire lasers [5,6,7,8,9,10], which have many quantum wires in the active region, or they are wide single-wire lasers which lase only in their excitedsubband states [11,12,13]. The excited-state lasing is typically characterized by a lasing energy above the energy of ground-state spontaneous emission at low pump levels. Since excited subbands allow motion of carriers in directions perpendicular to the axis of the wire, such excited-state wire lasing is not expected to have 1-D characteristics.In this paper, we demonstrate a single quantum wire laser with only one 1-D subband, and observe stable single-mode lasing from this ground state subband of our quantum wire.The single quantum wire laser is fabricated by an advanced crystal growth method called cleaved-edge overgrowth with molecular beam epitaxy (MBE) [14], in which two MBE growth steps are separated by an in situ wafer cleave. In the first MBE growth, we successively grew at 600 o C on a non-doped (001) GaAs substrate, a 500 nm GaAs buffer layer, a 1.5 µm Al 0.5 Ga 0.5 As a) Electronic mail: haya@issp.u-tokyo.ac.jp cladding layer, a 250 nm Al 0.35 Ga 0.65 As barrier, a 14 nm Al 0.07 Ga 0.93 As quantum well (stem well), a 250 nm Al 0.35 Ga 0.65 As barrier, 1.5 µm Al 0.5 Ga 0.5 As cladding layer, and a 6.5 µm GaAs cap layer. Then, we cleaved the wafer in the MBE chamber, and grew at 490 o C on the newly exposed (110) edge, a 6 nm GaAs quantum well (arm well), a 10 nm Al 0.5 Ga 0.5 As barrier, a 111 nm Al 0.1 Ga 0.1 As core layer, a 960 nm Al 0.5 Ga 0.5 As cladding layer, and a 10 nm GaAs cap layer. After the growth of the arm well, we interrupted growth and annealed the GaAs surface for 10 minutes at 600 o C [15]. Figure 1 shows a schematic cross-sectional view of the single quantum wire laser structure. At a T-shaped inter-

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confidence: 99%

Lasing from a single-quantum wire

Hayamizu

Yoshita

Watanabe

et al. 2002

Applied Physics Letters

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“…Recently, microstructures (textures) produced on a crystal surface by the chemical and electrochemical etching methods were demonstrated to greatly improve the performance of some optical and electro-optical devices; these improvements were attributed to the large surface-to-volume ratio after etching [5][6][7][8][9][10][11][12]. However, a three-electrode electrochemical setup has to be used during the electrochemical texturization, and in most cases of chemical texturization, a periodic mask is necessary [9][10].…”

Section: Introductionmentioning

confidence: 98%

Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth

Yang

Wang

Liu

2015

Int J Miner Metall Mater

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Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 10 14 cm −3 , a mobility of approximately 300 cm 2 ·V −1 ·s −1 , and a resistivity of approximately 10 2 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF:H 2 O 2 :H 2 O etchant. Textures with the sizes of approximately 1 μm were produced on {100}, {110}, and {111} Zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.

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“…Among all of these cross sections, the so called V‐groove quantum wire (VGQWR) has deserved a special attention due to this kind of morphology is naturally obtained by shaping the substrate in which the QWR is deposited. VGQWRs have been obtained by different ways like vapor deposition or chemical beam epitaxy and they have been used to fabricate devices like lasers or gates . This kind of morphology has been the subject of great interest to scientists and technicians because of this, several investigations can be found in the literature.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear terahertz response associated to electronic intersubband transitions in a V-groove quantum wire

Miranda-Pedraza

Ospina

Giraldo-Tobón

2017

Phys. Status Solidi B

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The electron states as well as the nonlinear optical rectification and second and third harmonic generations are investigated in a GaAs‐based V‐groove quantum wire. The single band effective mass Schrödinger equation is solved using the finite element method. The nonlinear optical coefficients were calculated from expressions derived within the compact density matrix method. It is found that this kind of nanostructures can exhibit noticeable nonlinear responses in the domain of the terahertz when the V‐groove is in the open‐wide geometrical configuration.

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Laser-action in V-groove-shaped InGaAs-InP single quantum wires

Cited by 33 publications

References 24 publications

Lasing from a single-quantum wire

Lasing from a single-quantum wire

Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth

Nonlinear terahertz response associated to electronic intersubband transitions in a V-groove quantum wire

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