Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating

Shindo, Takahiko; Futami, Motoo; Okumura, Tadashi; Osabe, Ryo; Koguchi, Takayuki; Amemiya, Tomohiro; Nishiyama, N.; Arai, Shigehisa

doi:10.1109/lpt.2013.2261980

Cited by 10 publications

(7 citation statements)

References 21 publications

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“…Then IQE was improved to 70% (DQE of 59%) for a similar cavity size by increasing the separation between quantum-wells for better carrier injection in the LCI structure [33]. As for the fabrication of the membrane DFB cavity structure, surface grating structures on an additional a-Si top layer [34], [35] or InP top layer [36], [37] were reported, however the threshold current was in the order of 10 mA or so under a pulsed condition.…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Hiratani¹,

Inoue²,

Tomiyasu³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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To advance on-chip optical interconnections, membrane distributed-reflector (DR) lasers with low threshold current and high-efficiency operation at one side output were realized. First, a membrane distributed Bragg reflector (DBR) laser with 80-µm-long active section and 50-µm-long DBR section was fabricated to clarify the DBR reflectivity. An external differential quantum efficiency of 35% for the output from the front facet was obtained, and the DBR reflectivity was estimated to be 75%. Next, a membrane DR laser with 61-µm-long distributed feedback section and 50-µm-long DBR section was fabricated. A threshold current of 0.48 mA, external differential quantum efficiency from the front side waveguide of 26%, and light output ratio from the front to the rear sides of 13 were obtained. The lasing spectrum showed a single-mode operation with a side-mode suppression-ratio (SMSR) of 40 dB. Finally, small-signal direct modulation was carried out and a modulation current efficiency factor of 7.9 GHz/mA 1/2 and 7 GHz/mA 1/2 were, respectively, obtained for the 30-µm-long and 61-µm-long devices.

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Section: Introductionmentioning

confidence: 99%

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Hiratani¹,

Inoue²,

Tomiyasu³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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“…In our early works, optically pumped operation has revealed low-threshold and strong index-coupled characteristics [35]- [37]. By adopting a lateral-current-injection (LCI) structure [38]- [41], LCI-membrane lasers were operated with both pulsed [42] and continuous-waves (CWs) [43], [44]. Many integration schemes are available, such as butt-jointed built-in (BJB) structures [45], quantum-well intermixing [46], offset quantum wells [47], and so on.…”

Section: Introductionmentioning

confidence: 99%

Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

Inoue¹,

Hiratani²,

Fukuda³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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On-chip optical interconnection is a promising technology for wiring future large-scale integrated circuits, as a means to mitigate the considerable power dissipation of traditional wiring layers. Here, we fabricate an integrated optical link using a membrane distributed-feedback (DFB) laser and a p-i-n photodiode (PD) in a butt-jointed built-in coupling geometry. The optical link is formed on a Si substrate by benzocyclobutene bonding. The integrated DFB laser shows a low-threshold current of 0.48 mA. Light transmission between the DFB laser and the p-i-n PD is confirmed with static measurements of the optical link. The optical link has a 3-dB bandwidth of 11.3 GHz at a 2.73 mA DFB laser bias current and a -3 V p-i-n PD bias voltage. A data transmission experiment of the optical link is performed, using a nonreturn to zero, pseudorandom-bit-sequence with a word length of 2 31 -1 signals. With a DFB laser bias current of 2.5 mA, 10 Gbit/s data transmission with a bit-error-rate of 6 × 10 -7 is successfully achieved.

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“…1,2) With growing demands for morecomplex and higher-capacity PICs operating at lower energy cost, shrinking the laser size and lowering down its power consumption are becoming increasingly important issues. 3) To achieve these requirements, some novel types of semiconductor lasers have been proposed and demonstrated, such as lambda-scale embedded active-region PhC laser (LEAP laser), 4,5) membrane distributed feedback (DFB) laser, 6,7) micropillar cavity laser, 8) and three-dimensional photonic crystal (PhC) laser. 9) These lasers utilize PhC cavity, DFB, or distributed Bragg reflectors (DBRs) to achieve high quality factors (Q factor).…”

Section: Introductionmentioning

confidence: 99%

“…Among these variety of different approaches, metalliccavity lasers, which use the metallic claddings to squeeze down the overall laser dimension, have also been drawing interest as attractive nanoscale light sources for the on-chip optical interconnects and nanophotonic integrated circuits. [10][11][12][13][14][15][16][17] Although their cavity Q factors are typically in the order of a few hundreds, 17) which are lower than the other methods discussed above, [4][5][6][7][8][9] the metallic-cavity lasers have the advantages of small total volume or footprint with large confinement factor, relatively simple structure which eases fabrication, excellent compatibility for electrically pumped operation, and efficient heat dissipation through metallic claddings.…”

Section: Introductionmentioning

confidence: 99%

Proposal and numerical study on capsule-shaped nanometallic semiconductor lasers

Zhang

Okimoto

Tanemura

et al. 2014

Jpn. J. Appl. Phys.

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We propose a novel subwavelength metallic InP/InGaAs laser with a capsule-shaped cavity. By introducing curved metallic facets at the both ends, resonant modes can be strongly confined inside the center of the cavity, which not only improves the confinement factor and the Q factor, but also reduces the cavity volume. As an example case, we numerically demonstrate that the proposed structure can decrease the plasmonic loss and improve the Q factor from 197 to 297 and reduce the threshold current from 291 to 60 µA with the effective modal volume of 0.45 µm 3 . In addition, we demonstrate that there exists an optimal structure of the capsule-shaped cavity to minimize the current threshold.

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Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating

Cited by 10 publications

References 21 publications

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

Proposal and numerical study on capsule-shaped nanometallic semiconductor lasers

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