Lattice accommodation of low-index planes: Ag(111) on Si(001)

Hoegen, M. Horn‐von; Schmidt, Th.; Meyer, Gerhard; Winau, D.; Rieder, Karl–Heinz

doi:10.1103/physrevb.52.10764

Cited by 43 publications

(22 citation statements)

References 16 publications

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“…Such a set of satellite peaks was also observed for several other systems, among which are Fe/W(110), Ge/Si(111), Bi(111)/Si(001), Ag(111)/Si(111), Co/Pd(111), etc. [17][18][19][20][21]. The lattice mismatch between the film and the substrate induces stress in the first few layers of the film for these material combinations.…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent formation and evolution of the interfacial dislocation network ofAg/Pt(111)

et al. 2014

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We have investigated the formation of a dislocation network that develops at the interface of a Ag film on Pt(111) and its evolution with film thickness at 600 K and above. This system is commonly considered to be representative of a surface-confined alloy, and we have studied the structure and topography of the films' surfaces up to thicknesses of 35 ML using high-resolution low-energy electron diffraction. The network is formed during the growth of the second layer and is fully developed already for films only a few layers thick. The spacing of the network varies between 5.8 and 6.6 nm when grown at 600 and 800 K, respectively. This dependence on the growth temperature is attributed to a temperature-dependent material mixing in the first (few) layers of the film. This mixing is irreversibly set by the deposition temperature and even persists during prolonged annealing at a temperature close to the desorption of Ag from Pt(111).

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Section: Resultsmentioning

confidence: 99%

Temperature-dependent formation and evolution of the interfacial dislocation network ofAg/Pt(111)

et al. 2014

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“…The rapid advancements of nanotechnology, however, has motivated researchers to fabricate epitaxial films on a semiconductor such as silicon with atomic-scale precision. This was accomplished by what is called two-step growth method [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] utilizing a kinetic path to avoid a route to the thermodynamically stable states. Thus fabricated ultrathin metal films can possess Shockley surface states 3,6,17,18 and quantum well states 3,6,7,15,16 due to the electron confinement in the normal direction, both of which are well-defined two-dimensional (2D) systems.…”

Section: Introductionmentioning

confidence: 99%

One-dimensional surface states on a striped Ag thin film with stacking fault arrays

et al. 2011

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One-dimensional (1D) stripe structures with a periodicity of 1.3 nm are formed by introduction of stacking fault arrays into a Ag thin film. The surface states of such striped Ag thin films are studied using a low temperature scanning tunneling microscope. Standing waves running in the longitudinal direction and characteristic spectral peaks are observed by differential conductance (dI/dV ) measurements, revealing the presence of 1D states on the surface stripes. Their formation can be attributed to quantum confinement of Ag(111) surface states into a stripe by stacking faults. To quantify the degree of confinement, the effective potential barrier at the stacking fault for Ag(111) surface states is estimated from independent measurements. A single quantum well model with the effective potential barrier can reproduce the main features of dI/dV spectra on stripes, while a Kronig-Penney model fails to do so. Thus the present system should be viewed as decoupled 1D states on individual stripes rather than as anisotropic 2D Bloch states extending over a stripe array.

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“…This surface, composed of periodic indium atomic chain arrays on silicon, is considered a representative model for 1D reconstructions [7,8]. Ag films are grown on In4 1 surfaces through low-temperature deposition; here, the selection of Ag facilitates comparison to growth behaviors on other substrates, which have been extensively studied in the past decades [9][10][11][12]. Scanning tunneling microscope (STM) and low energy electron diffraction (LEED) measurements clarify that Ag films have stripe structures with a transverse periodicity equal to that of the In4 1 reconstruction.…”

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confidence: 99%

One-Dimensional Surface Reconstruction as an Atomic-Scale Template for the Growth of Periodically Striped Ag Films

et al. 2006

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The role of the In/Si(111)-(4 x 1)-In surface as an atomic-scale geometrical template for the growth of Ag thin films is clarified by scanning tunneling microscopy and low energy electron diffraction. Low-temperature grown Ag films are found to have stripe structures with a transverse periodicity equal to that of indium chains of the In/Si(111)-(4 x 1)-In. The stripes exhibit a structural transformation at the thickness of 6 monolayers (ML); this relaxation allows the stripes to persist up to a thickness as large as 30 ML (approximately = 7 nm) while maintaining their mean periodicity. We attribute this stability to a coincidental matching of the periodicity and the corrugation amplitude between the Ag film and the substrate, which is realized by periodic insertion of stacking faults into a Ag fcc crystal.

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Lattice accommodation of low-index planes: Ag(111) on Si(001)

Cited by 43 publications

References 16 publications

Temperature-dependent formation and evolution of the interfacial dislocation network ofAg/Pt(111)

Temperature-dependent formation and evolution of the interfacial dislocation network ofAg/Pt(111)

One-dimensional surface states on a striped Ag thin film with stacking fault arrays

One-Dimensional Surface Reconstruction as an Atomic-Scale Template for the Growth of Periodically Striped Ag Films

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