Lead zirconate titanate thin films prepared on metal substrates by the sol–gel methods

Cheng, Jinrong; He, Li; Che, Lingjuan; Meng, Zhongyan

doi:10.1016/j.tsf.2006.05.001

Cited by 24 publications

(2 citation statements)

References 15 publications

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“…The LNO also compensates for the roughness of the Ni foil and provides a smooth interface for the PLZT films, resulting in higher breakdown strengths. Additionally, the LNO buffer reduces the compressive strain in the PLZT films deposited directly on nickel substrates due to the thermal expansion coefficient mismatch between PLZT and metal foils [19]. The x-ray diffraction pattern in figure 3 indicates that the PLZT/LNO/Ni sample is phase pure, has no preferred crystallographic orientation, and exhibits a perovskite structure with orthorhombic distortion (JCPDS No 55-0027).…”

Section: Resultsmentioning

confidence: 99%

Leakage current characteristics and dielectric breakdown of antiferroelectric Pb_0.92La_0.08Zr_0.95Ti_0.05O₃film capacitors grown on metal foils

Ma¹,

Kwon²,

Narayanan³

et al. 2008

J. Phys. D: Appl. Phys.

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We have grown crack-free antiferroelectric (AFE) Pb0.92La0.08Zr0.95Ti0.05O3 (PLZT) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, we applied a conductive buffer layer of lanthanum nickel oxide (LNO) on the nickel foil by chemical solution deposition prior to the PLZT deposition. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be prepared at high temperatures in air. With the AFE PLZT deposited on LNO-buffered Ni foils, we observed field-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, EAF = 260 kV cm−1, and the reverse phase transition field, EFA = 220 kV cm−1, were measured at room temperature on a ∼1.15 µm thick PLZT film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE states were ∼530 and ∼740, respectively, with dielectric loss <0.05 at room temperature. P–E hysteresis loop measured at room temperature confirmed the field-induced phase transition. The time-relaxation current density was investigated under various applied electric fields. The leakage current density of a 1.15 µm thick AFE PLZT film-on-foil capacitor was 5 × 10−9 A cm−2 at room temperature under 87 kV cm−1 applied field. The breakdown behaviour of the AFE PLZT film-on-foil capacitors was studied by Weibull analysis. The mean breakdown time decreased exponentially with increasing applied field. The mean breakdown time was over 610 s when a field of 1.26 MV cm−1 was applied to a 1.15 µm thick AFE PLZT film-on-foil capacitor.

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Section: Resultsmentioning

confidence: 99%

Leakage current characteristics and dielectric breakdown of antiferroelectric Pb_0.92La_0.08Zr_0.95Ti_0.05O₃film capacitors grown on metal foils

Ma¹,

Kwon²,

Narayanan³

et al. 2008

J. Phys. D: Appl. Phys.

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“…At an applied electric field of 900 kV cm −1 , the spontaneous polarization ( P s ), remanent polarization ( P r ) and the coercive electric field ( E c ) obtained from this P–E loop are 60µC cm −2 , 27µC cm −2 and 85 kV cm −1 , respectively. The PZT thin films directly deposited on SS substrates [14, 17]; neither have a well-shaped P–E loop nor possess high remanent polarization (less than 17µC cm −2 ), indicating that our PZT thick film exhibits better ferroelectric property.…”

Section: Resultsmentioning

confidence: 99%

Piezoelectric PZT thick films on LaNiO₃buffered stainless steel foils for flexible device applications

Zhu¹,

Li²,

Zhou³

et al. 2008

J. Phys. D: Appl. Phys.

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In this paper, we report on 4.5µm piezoelectric Pb(Zr0.52Ti0.48)O3 (PZT) thick films deposited on flexible stainless steel (SS) foils with LaNiO3 (LNO) buffer layers using a ceramic powder/sol–gel solution modified composite method. The polycrystalline thick films show a hysteresis loop at an applied electric field of 900 kV cm−1 with remanent polarization and coercive electric field values of 27µC cm−2 and 85 kV cm−1, respectively. At 1 kHz, the dielectric constant is 653 and the dielectric loss is 0.052. The leakage current density of the film is lower than 1.55 × 10−5 Acm−2 over the range of 0 to ±150V. The conduction current shows ohmic behaviour at a low electric field and space-charge-limited current characteristics at a high electric field.

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Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates

Narayanan

Tong

et al. 2010

J Mater Sci

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Lead zirconate titanate thin films prepared on metal substrates by the sol–gel methods

Cited by 24 publications

References 15 publications

Leakage current characteristics and dielectric breakdown of antiferroelectric Pb_0.92La_0.08Zr_0.95Ti_0.05O₃film capacitors grown on metal foils

Leakage current characteristics and dielectric breakdown of antiferroelectric Pb_0.92La_0.08Zr_0.95Ti_0.05O₃film capacitors grown on metal foils

Piezoelectric PZT thick films on LaNiO₃buffered stainless steel foils for flexible device applications

Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates

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Lead zirconate titanate thin films prepared on metal substrates by the sol–gel methods

Cited by 24 publications

References 15 publications

Leakage current characteristics and dielectric breakdown of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3film capacitors grown on metal foils

Leakage current characteristics and dielectric breakdown of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3film capacitors grown on metal foils

Piezoelectric PZT thick films on LaNiO3buffered stainless steel foils for flexible device applications

Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates

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Leakage current characteristics and dielectric breakdown of antiferroelectric Pb_0.92La_0.08Zr_0.95Ti_0.05O₃film capacitors grown on metal foils

Leakage current characteristics and dielectric breakdown of antiferroelectric Pb_0.92La_0.08Zr_0.95Ti_0.05O₃film capacitors grown on metal foils

Piezoelectric PZT thick films on LaNiO₃buffered stainless steel foils for flexible device applications