Leakage Current in Fast Recovery Diode Suppressed by Low Temperature Supercritical Fluid Treatment Process

Hung, Wei‐Chun; Jin, Fu‐Yuan; Chang, Ting‐Chang; Ciou, Fong‐Min; Chang, Chin-Han; Lin, Chien-Yu; Lin, Yu‐Shan; Chang, Kai‐Chun; Chang, Ya‐Hui; Lin, Yen-Sheng; Yeh, Chien‐Hung; Kuo, Ting Tzu; Chen, Kuan-Hsu

doi:10.1109/led.2020.3015287

Cited by 4 publications

(1 citation statement)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The interface defects were eliminated after the treatment. Thus, in such treatment, the SCF can effectively penetrate into the material to enhance the performance of amorphous solar cell [29][30][31][32]. This treatment not only reduces the thermal budget in device fabrication but also improves the performance of the device.…”

Section: Introductionmentioning

confidence: 99%

Advanced supercritical fluid technique to reduce amorphous silicon defects in heterojunction solar cells

Chou¹,

Lin²,

Chang³

et al. 2022

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

The advanced supercritical fluid (SCF) technique was applied to reduce defects in the amorphous silicon thin-film layer and enhance the efficiency of a heterojunction solar cell from 18.1% to 19.6%. An amorphous silicon thin-film layer has been used as a passivation layer between the substrate and electrode contact in heterojunction solar cells; however, many dangling bonds exist in the amorphous silicon thin-film layer. Therefore, the SCF technique was developed to passivate defects. The advantage of a supercritical state is high penetrability and low temperature. Thus, this SCF treatment can passivate defects in the completed device without changing the original fabrication process. After treatment, the passivation of dangling bonds was examined using Fourier-transform infrared spectroscopy, which confirmed the improved Si–H bonding. Moreover, electrical properties such as open-circuit voltage, short-circuit density, efficiency, shunt resistance, and leakage current were measured to confirm the enhancement. A simulated light source of 1 kW·M−2 global AM1.5 spectrum was used to analyze the increase in cell efficiency, and the dark current was analyzed to confirm the leakage current improvement. Finally, a model for explaining the phenomenon in cells after treatment was developed.

show abstract

Section: Introductionmentioning

confidence: 99%