Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films

Cho, Kyung Hoon; Choi, Choon-Gi; Choi, Joo Young; Seong, Tae Geun; Nahm, Sahn; Kang, Chong Yun; Yoon, Seok Jin; Kim, Jong Hee

doi:10.1016/j.jeurceramsoc.2009.04.029

Cited by 18 publications

(3 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Leakage current is reduced as reducing the concentration of oxygen vacancies or increasing the grain sizes. [36][37][38][39] However, we found that in the present study (as shown in Table I). The degree of crystallinity is even more important than oxygen vacancies and particle sizes.…”

Section: Resultscontrasting

confidence: 60%

Effects of Non-Stoichiometry on the Microstructure, Oxygen Vacancies, and Electrical Properties of KNN-Based Thin Films

Weng

Tsai

Hong

et al. 2016

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Highly piezoelectric lead-free thin films of (K0.5Na0.5)NbO3 + x mol% Na(I) and K(I) (KNN, x = 0–50 mol%) were fabricated using a sol-gel method on Pt (111)/Ti/SiO2/Si(100) substrates and the effects of additives on microstructure, oxygen vacancies, and electrical properties of the proposed samples were investigated. Excess quantities of Na(I) and K(I) were shown to decrease the formation of secondary phases and promote the effective growing of the grains. The addition of these elements was also shown to inhibit the formation of alkaline ion vacancies and decrease the leakage current density. Our findings indicate that the crystallinity and microstructure of the samples have a stronger effect than the oxygen vacancies on the piezoelectric properties of KNN films. Non-stoichiometric KNN films showed the highest remnant polarization (Pr = 11.2 μC/cm2), piezoelectric coefficient (d33 = 40.23 pm/V), voltage coefficient (g33 = 7.9 mm V/N), and lowest leakage current (∼3.46 × 10−7 A/cm2) when the excess ratio was 40 mol% following annealing at 700°C. Our results also demonstrate that the transport mechanism of the films is governed by Ohmic behavior under low electric fields and the effects of Poole-Frenkel emission under a strong electric field.

show abstract

Section: Resultscontrasting

confidence: 60%

Effects of Non-Stoichiometry on the Microstructure, Oxygen Vacancies, and Electrical Properties of KNN-Based Thin Films

Weng

Tsai

Hong

et al. 2016

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…If the calculated n using " op ¼ n 2 from the slope of the fitted line is the same as the experimental n, the leakage current can be determined by the PF mechanism. 22,28,29) The calculated n was 1.5, which was in good agreement with that (1.8-2.2) measured by spectroscopic ellipsometry. Thus, the PF mechanism was considered to dominate in STA-800 at higher electrical fields.…”

Section: Resultssupporting

confidence: 85%

Thermally Stimulated Current Analysis of Defects in Sol–Gel Derived SrTa₂O₆ Thin-Film Capacitors

Nishida

Echizen

et al. 2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

A brief review of established methods shows that only with the Berthelot technique is it possible to see a finite volume of liquid in sustained mechanical tension. A short discussion of the practice and theory reveals two uncertainties with the conventional technique : that of the determination of a true filling temperature, and the influence of compliance by the glass on the tension developed. A description is then given of a modified apparatus with which these difficulties do not arise. The tube is formed into a coil which deflects sufficiently to indicate internal pressure or tension, and by monitoring these deflections with a distance meter a record of pressure/ tension against temperature can be made. The course of a typical run is shown from which the excess pressure, filling temperature and limiting tension may all be estimated with much greater precision than befoie. The orders of magnitude of the results obtained are indicated, and a possible influence of non-uniform gaseous supersaturation is suggested.

show abstract

“…For the Schottky emission, a plot of ln(J/T 2 ) vs. E 1/2 produces a straight line, and the fitted dynamic dielectric constant (i.e., the optical dielectric constant) can be obtained from the slope of the plot, which is equal to square of the refractive index (ε r = n 2 ) theoretically [37,38]. In this study, the extracted ε r is 2.61, of which the square root is close to the n value obtained by SE.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y2O3 films

Liang

Liu

et al. 2011

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films

Cited by 18 publications

References 12 publications

Effects of Non-Stoichiometry on the Microstructure, Oxygen Vacancies, and Electrical Properties of KNN-Based Thin Films

Effects of Non-Stoichiometry on the Microstructure, Oxygen Vacancies, and Electrical Properties of KNN-Based Thin Films

Thermally Stimulated Current Analysis of Defects in Sol–Gel Derived SrTa₂O₆ Thin-Film Capacitors

Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y2O3 films

Contact Info

Product

Resources

About

Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films

Cited by 18 publications

References 12 publications

Effects of Non-Stoichiometry on the Microstructure, Oxygen Vacancies, and Electrical Properties of KNN-Based Thin Films

Effects of Non-Stoichiometry on the Microstructure, Oxygen Vacancies, and Electrical Properties of KNN-Based Thin Films

Thermally Stimulated Current Analysis of Defects in Sol–Gel Derived SrTa2O6 Thin-Film Capacitors

Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y2O3 films

Contact Info

Product

Resources

About

Thermally Stimulated Current Analysis of Defects in Sol–Gel Derived SrTa₂O₆ Thin-Film Capacitors